2SK2020-01 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum

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isc N-Channel MOSFET Transistor 2SK2020-01MR DESCRIPTION ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching S

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2SK2020-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran

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