2SK2020-01MR FAP-IIA Series > Features High Speed .
Fuji Electric
2SK2020-01MR - N-channel MOS-FET
2SK2020-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.
INCHANGE
2SK2020-01MR - N-Channel MOSFET
isc N-Channel MOSFET Transistor 2SK2020-01MR DESCRIPTION ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching S.
