2SK2022-01M FAP-IIA Series > Features High Speed S.
Fuji Electric
2SK2022-01M - N-channel MOS-FET
2SK2022-01M FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant.
Inchange Semiconductor
2SK2022-01M - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lo.