Power F-MOS FETs 2SK2960 Silicon N-Channel Power .
Panasonic
2SK2960 - Silicon N-Channel Power F-MOS FET
Power F-MOS FETs 2SK2960 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 250mJ q VGSS = ±30V guaranteed q .
Inchange Semiconductor
2SK2960 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK2960 FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Re.
