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2SK3290 Matched Datasheet

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No Part Number Description Manufacture PDF
1 2SK3290 Silicon N Channel MOS FET High Speed Switching

2SK3290 Silicon N Channel MOS FET High Speed Switching ADE-208-744 C (Z) 4th.Edition. June 1999 Features • Low on-resistance R DS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA) R DS = 0.9 Ω typ. (VG
Hitachi Semiconductor
Hitachi Semiconductor
2SK3290 pdf






2SK329 Similar Datasheet

Part Number Description Manufacture PDF
2SK3296 MOS FIELD EFFECT TRANSISTOR

2SK3290 Silicon N Channel MOS FET High Speed Switching ADE-208-744 C (Z) 4th.Edition. June 1999 Features • Low on-resistance R DS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA) R DS = 0.9 Ω typ. (VG
NEC
NEC
2SK3296 datasheet
2SK3298 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

2SK3290 Silicon N Channel MOS FET High Speed Switching ADE-208-744 C (Z) 4th.Edition. June 1999 Features • Low on-resistance R DS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA) R DS = 0.9 Ω typ. (VG
NEC
NEC
2SK3298 datasheet
2SK3299 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

2SK3290 Silicon N Channel MOS FET High Speed Switching ADE-208-744 C (Z) 4th.Edition. June 1999 Features • Low on-resistance R DS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA) R DS = 0.9 Ω typ. (VG
NEC
NEC
2SK3299 datasheet
2SK3290 Silicon N Channel MOS FET High Speed Switching

2SK3290 Silicon N Channel MOS FET High Speed Switching ADE-208-744 C (Z) 4th.Edition. June 1999 Features • Low on-resistance R DS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA) R DS = 0.9 Ω typ. (VG
Hitachi Semiconductor
Hitachi Semiconductor
2SK3290 datasheet
2SK3291 Ultrahigh-Speed Switching Applications

2SK3290 Silicon N Channel MOS FET High Speed Switching ADE-208-744 C (Z) 4th.Edition. June 1999 Features • Low on-resistance R DS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA) R DS = 0.9 Ω typ. (VG
Sanyo Semicon Device
Sanyo Semicon Device
2SK3291 datasheet
2SK3294 SWITCHING N-CHANNEL POWER MOSFET

2SK3290 Silicon N Channel MOS FET High Speed Switching ADE-208-744 C (Z) 4th.Edition. June 1999 Features • Low on-resistance R DS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA) R DS = 0.9 Ω typ. (VG
NEC
NEC
2SK3294 datasheet
2SK3296 MOS Field Effect Transistor

2SK3290 Silicon N Channel MOS FET High Speed Switching ADE-208-744 C (Z) 4th.Edition. June 1999 Features • Low on-resistance R DS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA) R DS = 0.9 Ω typ. (VG
Guangdong Kexin Industrial
Guangdong Kexin Industrial
2SK3296 datasheet
2SK3294 MOS Field Effect Transistor

2SK3290 Silicon N Channel MOS FET High Speed Switching ADE-208-744 C (Z) 4th.Edition. June 1999 Features • Low on-resistance R DS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA) R DS = 0.9 Ω typ. (VG
Guangdong Kexin Industrial
Guangdong Kexin Industrial
2SK3294 datasheet
2SK3295 SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

2SK3290 Silicon N Channel MOS FET High Speed Switching ADE-208-744 C (Z) 4th.Edition. June 1999 Features • Low on-resistance R DS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA) R DS = 0.9 Ω typ. (VG
NEC
NEC
2SK3295 datasheet
2SK3293 Ultrahigh-Speed Switching Applications

2SK3290 Silicon N Channel MOS FET High Speed Switching ADE-208-744 C (Z) 4th.Edition. June 1999 Features • Low on-resistance R DS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA) R DS = 0.9 Ω typ. (VG
Sanyo Semicon Device
Sanyo Semicon Device
2SK3293 datasheet


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