2SK3591 Datasheet | Specifications & PDF Download

2SK3591-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-p

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isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 41mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-

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2SK3591-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-pr

(23 views)