2SK3688-01SJ Datasheet | Specifications & PDF Download

2SK3688-01L,S,SJ Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWE

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isc N-Channel MOSFET Transistor 2SK3688-01SJ FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source

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