2SK3779-01R Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor 2SK3779-01R FEATURES ·Drain Current : ID= 59A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source O

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2SK3779-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET www.DataSheet4U.com Super FAP-G Series Features High spee

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