2SK415 Datasheet | Specifications & PDF Download

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Fast Switching Speed ·100% avalan

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www.DataSheet4U.com To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with R

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Preliminary www.DataSheet4U.com Datasheet 2SK4150 Silicon N Channel MOS FET High Speed Power Switching Features  Capable of 2.5 V gate drive  Low d

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2SK4150 Silicon N Channel MOS FET High Speed Power Switching Features  Capable of 2.5 V gate drive  Low drive current  Low on-resistance RDS(on) =

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