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Ruichips
RU30S5H - P-Channel Advanced Power MOSFET
RU30S5H P-Channel Advanced Power MOSFET MOSFET Features • -30V/-5A, RDS (ON) =38mΩ (Typ.) @ VGS=-10V RDS (ON) =56mΩ (Typ.) @ VGS=-4.5V • Super High D.
STMicroelectronics
VNL5030S5-E - fully protected low-side driver
PowerSSO-12 Features SO-8 Type VNL5030J-E VNL5030S5-E Vclamp 41 V RDS(on) 30 mΩ ID 25 A • Automotive qualified • Drain current: 25 A • ESD prote.
UNISONIC TECHNOLOGIES
MGBR30S50C - DUAL MOS GATED BARRIER RECTIFIER
UNISONIC TECHNOLOGIES CO., LTD MGBR30S50C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIERS DESCRIPTION The U TC MGBR30S50C is a du al mos gated.
APD
SBR0130S3 - (SBR0130S3 / SBR0130S5) Super barrier rectifier
SBR0130S3 SBR0130S5 Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and.
APD
SBR0130S5 - (SBR0130S3 / SBR0130S5) Super barrier rectifier
SBR0130S3 SBR0130S5 Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and.
MOSPEC
S30S50 - Schottky Barrier Rectifiers
MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epit.
