30S5 Datasheet | Specifications & PDF Download

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UNISONIC TECHNOLOGIES CO., LTD MGBR30S50C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIERS  DESCRIPTION The U TC MGBR30S50C is a du al mos gated

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SBR0130S3 SBR0130S5 Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and

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PowerSSO-12 Features SO-8 Type VNL5030J-E VNL5030S5-E Vclamp 41 V RDS(on) 30 mΩ ID 25 A • Automotive qualified • Drain current: 25 A • ESD prote

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SBR0130S3 SBR0130S5 Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and

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MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epit

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RU30S5H P-Channel Advanced Power MOSFET MOSFET Features • -30V/-5A, RDS (ON) =38mΩ (Typ.) @ VGS=-10V RDS (ON) =56mΩ (Typ.) @ VGS=-4.5V • Super High D

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