316W Datasheet | Specifications & PDF Download

BAS316WS High Speed Switching Diode Applications • High-speed switching Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltag

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DATASHEET ISL22316WM Single Digitally Controlled Potentiometer (XDCP™) Low Noise, Low Power I2C Bus, 128 Taps FN6622 Rev 1.00 November 11, 2011 The

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Small Signal Product BAS316WS Taiwan Semiconductor 200mW High-Speed Switching SMD Diode FEATURES - Fast switching device (trr<4.0ns) - Surface mount

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Alfa-MOS Technology General Description AFN3316W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

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INDUCTORS 1608W-2012W-3308W-3316W-3340W-5022W-UNSHIELDED POWER INDUCTOR-SMT TYPE Suntan® TSD CHTP-W FEAT U R E S ‧Low profile very effective in spa

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Preliminary Specification TS7529N 50W CW, 316W Peak SPDT FEATURES • Low insertion loss (TX Path) o 0.65dB @ 2.7GHz • High isolation (RX Path) o 45dB

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