32-Megabit Datasheet | Specifications & PDF Download

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Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 85 ns • Sector Erase Architecture – Sixty-three

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Features • • • • • ConcurrentFlash™ Memory Unique Architecture Allows the Flash Array To Be Read During the E2PROM Write Cycle 4 Megabit 5-volt Fla

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Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 85 ns • Sector Erase Architecture – Sixty-three

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ACT–F4M32A High Speed 128 Megabit Sector Erase FLASH Multichip Module Advanced Features www.aeroflex.com/act1.htm s Ready/Busy output (RY/BY) – Hard

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RAD Tolerant ACT–RS128K32 High Speed 4 Megabit SRAM Multichip Module Features s Overall configuration as 128K x 32 s Tolerant to 30KRad (Si) s Latch-u

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www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

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Features • Single Voltage Read/Write Operation: 1.65V to 1.95V • Access Time – 80 ns • Sector Erase Architecture • • • – Sixty-three 32K Word (64K Byt

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ACT–F1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module Features CIRCUIT TECHNOLOGY www.aeroflex.com/act1.htm s 4 Low Voltage/Power Intel

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Features • Single 2.5V - 3.6V or 2.7V - 3.6V Supply • RapidS Serial Interface: 66 MHz Maximum Clock Frequency – SPI Compatible Modes 0 and 3 • User Co

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www.DataSheet4U.com EN25Q32A EN25Q32A 32 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Single power supply operation - Full volt

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ACT-S512K32V High Speed 3.3Volt 16 Megabit SRAM Multichip Module Features s 4 Low Power CMOS 512K x 8 SRAMs in one MCM s Overall configuration as 512

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Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture – Sixty-three 32K Word (64K Bytes) Sec

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Features www.DataSheet4U.com • Single Voltage Read/Write Operation: 1.65V to 1.95V • Access Time – 80 ns • Sector Erase Architecture • • • • • • •

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Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 85 ns • Sector Erase Architecture – Sixty-three

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Features • Fast Interleave Cycle Time - 35 ns • Continuous Memory Interleaving – Unlimited Linear Access Data Output • Dual Voltage Range Operation •

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EN25Q32 EN25Q32 32 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Single power supply operation - Full voltage range: 2.7-3.6 volt

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Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 85 ns • Sector Erase Architecture – Sixty-three

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Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture – Sixty-three 32K Word (64K Bytes) Sec

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