32-megabit Datasheet | Specifications & PDF Download

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EN25Q32 EN25Q32 32 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Single power supply operation - Full voltage range: 2.7-3.6 volt

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Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture – Sixty-three 32K Word (64K Bytes) Sec

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ACT–F128K32 High Speed 4 Megabit FLASH Multichip Module Features CIRCUIT TECHNOLOGY www.aeroflex.com s 4 Low Power 128K x 8 FLASH Die in One MCM Pa

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EN25F32 Purpose Eon Silicon Solution Inc. (hereinafter called “Eon”) is going to provide its products’ top marking on ICs with < cFeon > from January

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m o .c U 4 t e e h S a at D S29AL032D . 32w Megabit CMOS 3.0 Volt-only Flash Memory 4 M x 8-Bit Uniform Sector w w4 M x 8-Bit/2 M x 16-Bit Boot Sector

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Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface (SPI) Compatible – Supports SPI Modes 0 and 3 – Supports RapidS® Operation – Suppor

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Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 85 ns • Sector Erase Architecture – Sixty-three

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ACT–F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module Features CIRCUIT TECHNOLOGY www.aeroflex.com/act1.htm s Ready/Busy output (RY/BY)

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Am29LV033C Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fuj

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www.DataSheet4U.com A29DL32x Series 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Preliminary Document Title 4M X 8 Bit / 2M X 16 Bit CMOS

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Standard Products QCOTSTM UT9Q512K32 16Megabit SRAM MCM Data Sheet March, 2009 FEATURES ‰ 25ns maximum (5 volt supply) address access time ‰ Asynchro

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Features • Single Voltage Read/Write Operation: 1.65V to 1.95V • Access Time – 80 ns • Sector Erase Architecture • • • – Sixty-three 32K Word (64K Byt

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Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 85 ns • Sector Erase Architecture – Sixty-three

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Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture – Sixty-three 32K Word (64K Bytes) Sec

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ACT-S512K32V High Speed 3.3Volt 16 Megabit SRAM Multichip Module Features s 4 Low Power CMOS 512K x 8 SRAMs in one MCM s Overall configuration as 512

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RAD Tolerant ACT–RS128K32 High Speed 4 Megabit SRAM Multichip Module Features s Overall configuration as 128K x 32 s Tolerant to 30KRad (Si) s Latch-u

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www.DataSheet4U.com 79C0832 8 Megabit (256K x 32-Bit) EEPROM MCM Memory FEATURES: • • • • DESCRIPTION: • • • • • • 256k x 32-bit EEPROM MCM Ma

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EN25Q32B EN25Q32B 32 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Single power supply operation - Full voltage range: 2.7-3.6 vo

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EN25S32A (2S) EN25S32A (2S) 32 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Single power supply operation – Full voltage r

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