32K Datasheet | Specifications & PDF Download

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CY7C25632KV18 CY7C25652KV18 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 72-Mbit QDR® II+ SRAM Four-Word Burs

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S32K3XX S32K3xx Data Sheet Rev. 11 — 16 April 2025 Product Data Sheet Supports S32K344, S32K324, S32K314, S32K312, S32K311, S32K310, S32K341, S32K34

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1CY7C274 CY7C271 CY7C274 32K x 8 Power Switched and Reprogrammable PROM Features • CMOS for optimum speed/power • Windowed for reprogrammability • H

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NXP Semiconductors Data Sheet: Technical Data Document Number S32K1XX Rev. 14, 08/2021 S32K1xx Data Sheet Notes • Supports S32K116, S32K118, S32K142

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Note • Please read rating and CAUTION (for storage, operating, rating, soldering, mounting and handling) in this catalog to prevent smoking and/or b

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 Rev. 1.1 UTRON UT61256 32K X 8 BIT HIGH SPEED CMOS SRAM FEATURES Fast access time : 8/10/12/15ns (max.) Low operating power consumption: 80 mA (t

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S32K3XX S32K3xx Data Sheet Rev. 11 — 16 April 2025 Product Data Sheet Supports S32K344, S32K324, S32K314, S32K312, S32K311, S32K310, S32K341, S32K34

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Ordering number : ENN6303 CMOS IC LC35V256EM, ET-70W 256K (32K words × 8 bits) SRAM Control pins: OE and CE Overview The LC35V256EM-70W and LC35V25

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This product complies with the RoHS Directive (EU 2002/95/EC). Switching Diodes MA3S132A (MA132A), MA3S132K (MA132K) Silicon epitaxial planar type F

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Note • Please read rating and CAUTION (for storage, operating, rating, soldering, mounting and handling) in this catalog to prevent smoking and/or b

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Plastic Film Capacitors Metallized Polyester Film Capacitor Type: ECQUL [Class X2] [Class Y2/X2] In accordance with UL/CSA and European safety regul

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24C32 32K 5.0V I2C™ Smart Serial EEPROM FEATURES • Voltage operating range: 4.5V to 5.5V - Peak write current 3 mA at 5.5V - Maximum read current 150

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TOSHIBA 1l:55B329P/]-10/12 SILICON GATE BiCMOS 32,768 WORD x 9 BIT BiCMOS STATIC RAM Description The TC55B329P/J is a 294,912 bit high speed BiCMO

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TOSHIBA 1l:55B329P/]-10/12 SILICON GATE BiCMOS 32,768 WORD x 9 BIT BiCMOS STATIC RAM Description The TC55B329P/J is a 294,912 bit high speed BiCMO

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TOSHIBA 1l:55329lU?/AJ-15/20/25/35 SILICON GATE CMOS 32,768 WORD x 9 BIT CMOS STATIC RAM Description The TC55329AP/AJ is a 294,912 bit high speed

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TOSHIBA 1l:55B328P/]-10/12 SILICON GATE BiCMOS 32,768 WORD x 8 BIT BiCMOS STATIC RAM Description The TC55B328P/J is a 262,144 bit high speed BiCMO

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TOSHIBA 1l:55B328P/]-10/12 SILICON GATE BiCMOS 32,768 WORD x 8 BIT BiCMOS STATIC RAM Description The TC55B328P/J is a 262,144 bit high speed BiCMO

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