| Part Number | Description | Manufacture |
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N-Channel MOSFET 72 Order code VDSS STW34NM60N 600 V RDS(on) 0.105 Ω ID PTOT 31.5 A 250 W • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Figure 1. Internal schematic |
 STMicroelectronics |
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N-CHANNEL POWER MOSFET Order codes VDS @TJ max. RDS(on) max. ID STB34NM60ND STF34NM60ND STP34NM60ND 650 V 0.110 Ω 29 A STW34NM60ND • The world’s best RDS(on) in TO-220 amongst the fast recovery diode devices • 100% avalanche tested • Low input capacitance and gate c |
STMicroelectronics |
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N-CHANNEL POWER MOSFET Order codes VDS @TJ max. RDS(on) max. ID STB34NM60ND STF34NM60ND STP34NM60ND 650 V 0.110 Ω 29 A STW34NM60ND • The world’s best RDS(on) in TO-220 amongst the fast recovery diode devices • 100% avalanche tested • Low input capacitance and gate c |
STMicroelectronics |
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N-CHANNEL POWER MOSFET Order codes VDS @TJ max. RDS(on) max. ID STB34NM60ND STF34NM60ND STP34NM60ND 650 V 0.110 Ω 29 A STW34NM60ND • The world’s best RDS(on) in TO-220 amongst the fast recovery diode devices • 100% avalanche tested • Low input capacitance and gate c |
STMicroelectronics |
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N-CHANNEL POWER MOSFET TAB 2 3 1 D2PAK TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% * 6 Order codes VDSS STB34NM60N 600 V STP34NM60N RDS(on) 0.105 Ω ID PTOT 31.5 A 250 W • 100% avalanche tested • Low input capacitance and gate charge • Low |
STMicroelectronics |
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Power MOSFET Type STF34NM60N STP34NM60N STW34NM60N ■ ■ ■ VDSS 600 V 600 V 600 V RDS(on) max. 0.105 Ω 0.105 Ω 0.105 Ω ID 29 A 29 A 29 A PTOT 40 W 210 W 210 W 2 1 3 1 3 2 TO-247 TO-220 100% avalanche tested Low input capacitance and gate charge Low gate inpu |
 ST Microelectronics |
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Power MOSFET Type STF34NM60N STP34NM60N STW34NM60N ■ ■ ■ VDSS 600 V 600 V 600 V RDS(on) max. 0.105 Ω 0.105 Ω 0.105 Ω ID 29 A 29 A 29 A PTOT 40 W 210 W 210 W 2 1 3 1 3 2 TO-247 TO-220 100% avalanche tested Low input capacitance and gate charge Low gate inpu |
ST Microelectronics |
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N-Channel MOSFET ·Drain Current –ID=31.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 105mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO |
 INCHANGE |
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N-Channel MOSFET ·Drain Current –ID=31.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 105mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO |
INCHANGE |
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N-Channel MOSFET ·Drain Current –ID=29A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 110mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS |
INCHANGE |
| Total 16 results |
