.
Texas Instruments
LM358A - Industry-Standard Dual Operational Amplifiers
LM158, LM158A, LM258, LM258A LM2904, LM2904B, LM2904BA, LM2904V LM358, LM358A, LM358B, LM358BA SLOS068AA β JUNE 1976 β REVISED MARCH 2022 Industry-Sta.
Toshiba Semiconductor
K3568 - 2SK3568
2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ο-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm β’ Low drain-source O.
On-Bright Electronics
OB2535 - High Precision CC/CV Primary-Side PWM Power Switch
OB2535 High Precision CC/CV Primary-Side PWM Power Switch GENERAL DESCRIPTION OB2535 is a high performance offline PWM Power switch for low power AC/.
Fairchild
KA3525A - SMPS CONTROLLER
KA3525A SMPS Controller www.fairchildsemi.com Features β’ 5V Β±1% Reference β’ Oscillator Sync Terminal β’ Internal Soft Start β’ Deadtime Control β’ Unde.DS35Q1GA - 3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH
PN: DS35X1GAXXX DS35X1GAXXX 3.3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH Rev.03 (Feb 20, 2020) 1 PN: DS35X1GAXXX Catalog Revision History .
TPS
SY3511 - Mobile power controller
SY3511 SY3511 ICοΌγLED γ οΌγ οΌ οΌοΌ γ SY3511ESOP8γ γγGPSγ Β οΌοΌγ MOS Β 1A Β 1A Β Β //οΌ Β C/10 οΌ Β 4.2.
Texas Instruments
BQ735 - 1- to 4-Cell Li+ Battery SMBus Charge Controller
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community bq24735 SLUSAK9B β SEPTEMBER 2011 β REVISED APRIL 2015 bq247.
AVAGO
ACPL-T350 - 2.5 Amp Output Current IGBT Gate Driver Optocoupler
ACPL-T350 2.5 Amp Output Current IGBT Gate Driver Optocoupler with Low ICC Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant op.AX2358F - 6-channel input volume Controller
AX2358 AX2358 οΌοΌ 2 ββ6 οΌ 2 6 οΌ 6 οΌ I2C οΌ0 -79dBοΌ 1dB οΌοΌοΌοΌ AV γ z οΌVCC=5.0ο½9.0V z 4 6 z 2 ββ6 z οΌ0dB~-79dBοΌ 1dB z 3.0Vrms(1KHZ,THD<1%) z οΌ.
Toshiba Semiconductor
K3569 - 2SK3569
2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ο-MOSVI) 2SK3569 Switching Regulator Applications β’ Low drain-source ON-resistanc.
Midcom
000-7112-35 - Discrete Single Port 10/100 Base-T PCMCIA AEDFP-G16
Discrete Single Port 10/100 Base-T PCMCIA AEDFP-G16 LANDatacom more than you expect Typical Common Electrical Characteristics1 Inductance 350uH Min.TGAN20N135FD - Field Stop Trench IGBT
Features: β’1350V Field Stop Trench Technology β’ High Speed Switching β’ Low Conduction Loss β’ Positive Temperature Coefficient β’ Easy Parallel Operatio.
Analog Devices
ADF4351 - Wideband Synthesizer
Data Sheet FEATURES Output frequency range: 35 MHz to 4400 MHz Fractional-N synthesizer and integer-N synthesizer Low phase noise VCO Programmable div.
Texas Instruments
LM350-N - 3-Amp Adjustable Regulator
Product Folder Order Now Technical Documents Tools & Software Support & Community LM35 SNIS159H β AUGUST 1999 β REVISED DECEMBER 2017 LM35 Precis.MS4N1350 - N-channel MOSFET
MS4N1350 MS4N1350E MS4N1350B MS4N1350W MS4N1350FW N-channel 1500 V, 6 β¦, 4 A, Power MOSFET in TO-263,TO-247TO-220, TO-3PB, TO-3PF Features Type VDS.
Samsung
INR18650-35E - Lithium-ion rechargeable cell
Spec. No. SAMSUNG SDI Confidential Proprietary INR18650-35E Version No. Ver. 1.1 SPECIFICATION OF PRODUCT for Lithium-ion rechargeable cell Model na.
ON Semiconductor
MUN5335DW1 - Complementary Bias Resistor Transistors
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW NPN and PNP Transistors with Monolithic Bias .
ON Semiconductor
NSM21356DW6T1G - Dual Complementary Transistors
NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network NSM21356DW6T1G contains .
