3870 Datasheet | Specifications & PDF Download

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® MOTOROLA Advance InforIllation SINGLE-CHIP MICROCONTROLLER The MC3870 is a monolithic 8-bit microcomputer utilizirlg ionimplanted, N-channel silicon

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2SK3870-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Outline Drawings (mm) 200406 TO-220AB Features High speed switching N

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Audio ICs BBS (bass boost system) for radio cassette players BA3870 The BA3870 is a bass boost audio IC for radio cassette players. BBS adjusts the b

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20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.3A TELEPHONE: (973) 379-2822 (212) 227-6008 FAX: (973) 3764060 2N3870 thru 2N3873 (SILICON) 2N3896 thr

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Introduction - 3859 and 3870 • Thanks to John Shaw, I have a pin diagram of the MK3870 and the MK38P70. The MK just identifies Mostek as the chip man

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High-reliability discrete products and engineering services since 1977 2N3870-2N1850, 2N3896-2N3899, 2N6171-2N6174 SILICON CONTROLLED RECTIFIER FEAT

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RFPP3870 GaAs/GaN Push Pull Hybrid 45MHz to 1218MHz The RFPP3870 is a Hybrid Push Pull amplifier module. The part employs GaAs HFET die, GaAs pHemt di

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2SK3870-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Outline Drawings (mm) 200406 TO-220AB Features High speed switching N

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UTC LD3870 LINEAR INTEGRATED CIRCUIT LOW DROPOUT VOLTAGE REGULATOR DESCRIPTION The UTC LD3870 is low dropout voltage regulator designed for cellular

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UNISONIC TECHNOLOGIES CO., LTD LD3870 LINEAR INTEGRATED CIRCUIT LOW DROPOUT VOLTAGE REGULATOR „ DESCRIPTION The UTC LD3870 is low dropout voltage

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isc N-Channel MOSFET Transistor 2SK3870 FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 230V(Min) ·Static Drain-Source On-Re

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AOC3870 12V Common-Drain Dual N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RSS(ON) • With ESD protection to improve ba

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Sound Processors for BOOM BOX / Mini-component Stereo Sound Processors with Built-in 2-band Equalizers BD3870FS,BD3871FS,BD3872FS,BD3873FS No.10086EA

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LH538700A FEATURES • 1,048,576 words × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption: Operating: 550 mW (MAX.) Standby: 550 µW (

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IR3870MBF PD-97392 www.DataSheet4U.com SupIRBuck Features • • • • • • • • • • • • • • • TM 10A HIGHLY INTEGRATED Description The IR3870M SupIRBuck

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Power Transistors 2SC3870 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 0.7±0.1 10.0±0.2 4.2±

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