3964 Datasheet | Specifications & PDF Download

30V N-Channel MOSFETs PDC3964X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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www.DataSheet4U.com 19-1314; Rev 1; 10/02 +3.0V to +5.5V, 125Mbps to 266Mbps Limiting Amplifiers with Loss-of-Signal Detector General Description Th

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3964 DUAL FULL-BRIDGE PWM MOTOR DRIVER 3964 Designed for pulse-width modulated (PWM) current control of bipolar stepper motors, the A3964SB and A3964

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LT3964 Dual 36V Synchronous 1.6A Buck LED Driver with I2C FEATURES nn Wide Input Voltage Range: 4V to 36V nn Two Independent 1.6A/40V Synchronous Buc

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A3964 Dual Full-Bridge PWM Motor Driver Features and Benefits ▪ ±800 mA continuous output current rating ▪ 30 V output voltage rating ▪ Internal PWM

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SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. Switching Applications Solenoid Drive Applications Temperature Compensated for Audio Amplifier

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2SC3964 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3964 Switching Applications Solenoid Drive Applications Temperature Compensated for Audio A

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation @

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2N3964 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device in a Hermetically sealed TO18 Metal Package

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30V N-Channel MOSFETs PDD3964 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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www.DataSheet4U.com 19-1314; Rev 1; 10/02 +3.0V to +5.5V, 125Mbps to 266Mbps Limiting Amplifiers with Loss-of-Signal Detector General Description Th

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www.DataSheet4U.com 19-1314; Rev 1; 10/02 +3.0V to +5.5V, 125Mbps to 266Mbps Limiting Amplifiers with Loss-of-Signal Detector General Description Th

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2N3963 2N3964 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3963 and 2N3964 are silicon PNP t

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30V N-Channel MOSFETs PDC3964CZ General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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LP3961/LP3964 800mA Fast Ultra Low Dropout Linear Regulators May 2000 LP3961/LP3964 800mA Fast Ultra Low Dropout Linear Regulators General Descripti

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2SC3964 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3964 Switching Applications Solenoid Drive Applications Temperature Compensated for Audio A

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MAX3964A/MAX3968 19-1314; Rev 5; 8/06 EVAALVUAAILTAIOBNLEKIT +3.0V to +5.5V, 125Mbps to 266Mbps Limiting Amplifiers with Loss-of-Signal Detector

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community LP3961, LP3964 SNVS056J – MAY 2000 – REVISED JUNE 2015 LP396

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