3EZ11 Datasheet | Specifications & PDF Download

MCC Features l Low Profile Package l Built-in Strain Relief l Glass Passivated Junction l Low Inductance l Excellent Clamping Capability
   

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1SMB3EZ11 THRU 1SMB3EZ200 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts FEATURES l For surface mounted applications in

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1SMB3EZ11 THRU 1SMB3EZ200 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts FEATURES l For surface mounted applications in

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Zener Diodes 3W 3EZ3.9D5/SZ553J to 2EZ200D5/SZ55D0, DO-41/SMA WWW.SEMITECH.CN 10 Zener Diodes 3W 3EZ3.9D5/SZ553J to 2EZ200D5/SZ55D0, DO-41/SMA SMA WW

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1SMB3EZ3.9 - 1SMB3EZ400 SURFACE MOUNT SILICON ZENER DIODES VOLTAGE RANGE: 3.9 - 400V POWER: 3.0Wa t t s Features Complete Voltage Range 3.9 to 400

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3EZ6.8~3EZ51 SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 3.0 Watts FEATURES • Low profile package • Built-in strain relief • Low inductan

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R SEMICONDUCTOR 3EZ3.9D5 THRU 3EZ200D5 3W SILICON PLANAR ZENER DIODES FEATURES Low leakage, low zener impedance at low current Maximum power dissipa

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Elektronische Bauelemente 3EZxxxD5 Series Voltage 6.2V~200V 3 Watts Surface Mount Zener Diode RoHS Compliant Product A suffix of “-C” specifies halo

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Elektronische Bauelemente 3EZxxxD5 Series Voltage 6.2V~200V 3 Watts Surface Mount Zener Diode RoHS Compliant Product A suffix of “-C” specifies halo

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1SMB3EZ3.9 - 1SMB3EZ400 SURFACE MOUNT SILICON ZENER DIODES VOLTAGE RANGE: 3.9 - 400V POWER: 3.0Wa t t s Features Complete Voltage Range 3.9 to 400

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WWW.Microsemi .COM SCOTTSDALE DIVISION 3EZ3.9D5 thru 3EZ200D5, e3 Silicon 3 Watt Zener Diode DESCRIPTION The 3EZ3.9D5 thru 3EZ200D5 series of axial

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DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS 3EZ6.2 THRU 3EZ200 TECHNICAL SPECIFICATIONS OF GLASS PASSIVATED JUNCTION ZENER DIODES VOLTAGE RANGE

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DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS 3EZ6.2 THRU 3EZ200 TECHNICAL SPECIFICATIONS OF GLASS PASSIVATED JUNCTION ZENER DIODES VOLTAGE RANGE

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MCC Features l Low Profile Package l Built-in Strain Relief l Glass Passivated Junction l Low Inductance l Excellent Clamping Capability
   

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Certificate TH97/10561QM Certificate TW00/17276EM 3EZ3.9D10 ~ 3EZ200D10 SILICON ZENER DIODES VZ : 3.9 - 200 Volts PD : 3 Watts DO - 41 FEATURES

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® WON-TOP ELECTRONICS Features  Glass Passivated Die Construction  3.0W Power Dissipation  3.3V – 200V Nominal Zener Voltage  5% Standard Vz Toler

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® WON-TOP ELECTRONICS Features  Glass Passivated Die Construction  3.0W Power Dissipation  3.3V – 200V Nominal Zener Voltage  5% Standard Vz Toler

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ϯtdžŝĂů>ĞĂĚĞŶĞƌŝŽĚĞƐͲϲ͘ϮsƚŽϮϬϬs ϯ ϲ͘Ϯϱ THRU ϯ ϮϬϬϱ PRIMARY CHARACTERISTICS PD 3W VZ 6.2V~200V IZT TJ,Max Please refer to the spe

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BL GALAXY ELECTRICAL ZENER DIODES 3EZ1 --- 3EZ200 Vz RANGE: 1.0, 3.9 - 200V POWER DISSIPATION: 3.0 W FEAT U R ES For us e in s tabilizing and clippi

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Zener Diodes 3W 3EZ3.9D5/SZ553J to 2EZ200D5/SZ55D0, DO-41/SMA WWW.SEMITECH.CN 10 Zener Diodes 3W 3EZ3.9D5/SZ553J to 2EZ200D5/SZ55D0, DO-41/SMA SMA WW

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