4.60 Datasheet | Specifications & PDF Download

www.DataSheet4U.com MS2601 NPN RF POWER TRANSISTOR DESCRIPTION: The ASI MS2601 is Common Base Device Designed for Pulsed S-Band Radar Amplifier App

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MBR2060CT-MBR20100CT High-reliability discrete products and engineering services since 1977 20A SCHOTTKY RECTIFIERS FEATURES  Available as “HR” (h

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Thyristors 12 Amp High Junction Temperature SCRs SJxx12xx series RoHS Agency Approvals Agency * - L Package Only Schematic Symbol Agency File Numb

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www.datasheet4u.com April 2007 HYB25DC512800B[E/F] HYB25DC512160B[E/F] 512-Mbit Double-Data-Rate SDRAM DDR SDRAM RoHS Compliant Products Internet

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NJM4560 DUAL OPERATIONAL AMPLIFIER ■ GENERAL DESCRIPTION The NJM4560 integrated circuit is a high-gain, wide bandwidth, dual operational amplifier c

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www.DataSheet4U.com USERS MANUAL µOLED 160 GMD1 µSD (Serial Command Platform) Revision 1.3 4D Systems www.DataSheet4U.com PROPRIETORY INFORMATION

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3M EMI Absorber with Shielding AB6000 Series, AB6000S Series, and AB6000G Series Data Sheet October 2008 ™ Description 3M™ EMI Absorber with Shield

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Color CCD MicroCamera Head 1/6” SMCC06048 Features: • Extremely miniaturized color CCD camera (3.8 * 3.8 * 8.74 mm) • Light Weight (0.27 g) • High res

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IPA70R360P7S MOSFET 700V CoolMOSª P7 Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the su

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A-Data Revision History Revision 1 ( Dec. 2001 ) 1.Fister release. ADD8616A8A Revision 2 ( Apr. 2002 ) 1. Changed module current specification. 2. A

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MAAMSS0060 Broadband CATV Amplifier 50 - 1000 MHz Features • 75 Ω Input / Output Match • CTB: -75 dBc • Noise Figure: 1.8 dB • Gain: 17 dB, 20 dB • Le

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SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

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MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

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TPF632A / TPF605A / TPF607A Features 3-VRMS Audio Line Driver with Integrated Charge Pump Description  3-VRMS Output into 2.5kΩ Load with 5V Suppl

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TPQ05100x 0.9-V to 5.5-V VIN, 600-mA Synchronous Step-up Regulator Features • 260-nA Ultra-Low IQ into the VOUT Pin • 40-nA Ultra-Low IQ into the VIN

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TPQ05100x 0.9-V to 5.5-V VIN, 600-mA Synchronous Step-up Regulator Features • 260-nA Ultra-Low IQ into the VOUT Pin • 40-nA Ultra-Low IQ into the VIN

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TPAFE5160 16bit, 8-Channel, Simultaneous Sampling ADC with Bipolar inputs Features  8 simultaneously sampled inputs  Single 5V analog supply and 1.

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