4410A Datasheet | Specifications & PDF Download

Description AP4410A 30V N-Channel Enhancement Mode MOSFET The AP4410A uses advanced trench technology to provide excellent RDS(ON), low gate charge

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HM4410A N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4410A uses advanced trench technology and design to provide excellent RDS(ON) with

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AP4410AGM-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic ▼ R

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FDS4410A Single N-Channel, Logic-Level, PowerTrench® MOSFET May 2005 FDS4410A Single N-Channel, Logic-Level, PowerTrench® MOSFET Features ■ 10 A, 3

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CEM4410A N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 10A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Super high dens

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VS4410ATD 100V/110A N-Channel Advanced Power MOSFET Features ♦Low On-Resistance ♦Fast Switching ♦100% Avalanche Tested ♦Repetitive Avalanche Allowed u

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VS4410AT 100V/110A N-Channel Advanced Power MOSFET Features Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up

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CHENMKO ENTERPRISE CO.,LTD CHM4410AJPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION * Servo motor con

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ME4410A N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4410A is the N-Channel logic enhancement mode power field effect transistors are produce

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AP4410AGM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic D D

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S T M4410A S amHop Microelectronics C orp. J an 04 2005 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 30V

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