4G-BIT Datasheet | Specifications & PDF Download

m Preliminary o HY27UH(08/16)4G2M Series .c HY27SH(08/16)4G2M Series U 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash 4 t e e h S Document Title a 4Gbit (5

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www.DataSheet.co.kr Ordering number : ENA1795 LC878496PB,LC8784C8PB LC8784G0PB,LC8784G1PB LC8784J2PB,LC8784J3PB LC8784M4PB,LC8784P6PB LC8784P7PB Ove

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7V ~ 1.95V)  Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit

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1 HY27UF(08/16)4G2B Series 4Gbit (512Mx8bit) NAND Flash 4Gb NAND FLASH HY27UF(08/16)4G2B www.DataSheet4U.com This document is a general product desc

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Sep. 2020 SCB13H4Gxx0AF 4Gbit DDR3L SDRAM EU RoHS Compliant Products Data Sheet Rev. G Data Sheet SCB13H4Gxx0AF 4-Gbit DDR3L SDRAM Revision History

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www.DataSheet.co.kr Ordering number : ENA1795 LC878496PB,LC8784C8PB LC8784G0PB,LC8784G1PB LC8784J2PB,LC8784J3PB LC8784M4PB,LC8784P6PB LC8784P7PB Ove

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K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revisi

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TOSHIBA CONFIDENTIAL TC58NVG4D2FTA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (4G × 8 BIT) CMOS NAND E2PROM (Multi-

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ESMT Flash FEATURES  Organization – Memory cell array 4352 × 128K × 8 – Register 4352 × 8 – Page size 4352 bytes – Block size (256K + 16K) bytes  Mo

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dsPIC33EPXXGS50X FAMILY 16-Bit Digital Signal Controllers for Digital Power Applications with Interconnected High-Speed PWM, ADC, PGA and Comparators

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MICROCIRCUIT CORPORATION DESCRIPTION The Accutek AK5916384S high density memory module is a CMOS random access memory organized in 16 Meg x 9 bit word

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dsPIC33EPXXXGS70X/80X FAMILY 16-Bit Digital Signal Controllers for Digital Power Applications with Interconnected High-Speed PWM, ADC, PGA and Compar

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dsPIC33FJXXXGPX06/X08/X10 Data Sheet High-Performance, 16-Bit Digital Signal Controllers © 2009 Microchip Technology Inc. DS70286C Note the followi

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COVER PRELIMINARY DATA SHEET 4G bits DDR3L SDRAM EDJ4204EFBG (1024M words × 4 bits) EDJ4208EFBG (512M words × 8 bits) EDJ4216EFBG (256M words × 16 b

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dsPIC33EPXXXGP50X, dsPIC33EPXXXMC20X/50X and PIC24EPXXXGP/MC20X 16-Bit Microcontrollers and Digital Signal Controllers with High-Speed PWM, Op Amps an

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K6F4016U4G Family Preliminary CMwwOwS.DaStaSRheAet4MU.com Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision

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ESMT Flash FEATURES  Organization – Memory cell array 4352 × 128K × 8 – Register 4352 × 8 – Page size 4352 bytes – Block size (256K + 16K) bytes  Mo

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ESMT Flash FEATURES  Voltage Supply ­ VCC: 3.3V (2.7 V ~ 3.6V)  Organization ­ Page Size: (4K + 256) bytes ­ Data Register: (4K + 256) bytes ­ Block

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Sep. 2020 SCB13H4Gxx0AF 4Gbit DDR3L SDRAM EU RoHS Compliant Products Data Sheet Rev. G Data Sheet SCB13H4Gxx0AF 4-Gbit DDR3L SDRAM Revision History

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Features Datasheet RX660 Group Renesas MCUs R01DS0393EJ0100 Rev.1.00 Mar 18, 2022 120-MHz 32-bit RX MCU, on-chip FPU, 709 CoreMark, Supportive of

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