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T25S40 - 4M BIT SPI NOR FLASH
Bright Moon Semiconductor Co.,Ltd T25S40 SPECIFICATION T25S40 Version 2.0 reserves the right to change this documentation without prior notice. Br.IS43LR32160C - 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43/46LR32160C 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32160C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous D.IS43LR32160B - 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32160B, IS46LR32160B 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32160B is 536,870,912 bits CMOS Mobile Double Data Rate Sy.25Q64FVSIG - 3V 64M-BIT SERIAL FLASH MEMORY
W25Q64FV 3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI Publication Release Date: July 18, 2017 -1 Revision S W25Q64FV Table of Contents .IS46LR32160C - 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43/46LR32160C 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32160C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous D.PC100-323-620 - 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules HYS64/72V2200GU-8/-10 HYS64/72V4220GU.LE28FV4001T - 4MEG (52488 x 8 Bits) Flash Memory
Ordering number : EN*5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series are .FST162244MTD - 16-Bit Bus Switch with 25 Series Resistor in Outputs Preliminary
Preliminary FST162244 16-Bit Bus Switch with 25Ω Series Resistor in Outputs (Preliminary) May 2001 Revised May 2001 FST162244 16-Bit Bus Switch wit.MBM29LV652UE-90 - 64M (4M x 16) BIT FLASH MEMORY
FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 64M (4M × 16) BIT MBM29LV652UE -90/12 DS05-20886-1E s GENERAL DESCRIPTION The MBM29LV652UE is a 6.IS42VM32160E - 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32160E are mobile 536,870,912 bits CMOS Synchronou.M27C320 - 32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM
M27C320 32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM PRELIMINARY DATA s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 80ns BYTE-WIDE or WORD-W.M27V320 - 32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM
M27V320 32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM s 3.3V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 32.IS45VM16160E - 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronou.K4S640832D - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S640832D CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to c.K9F1208Q0B-P - 64M x 8 Bit NAND Flash Memory
K9F1208Q0B K9F1208D0B K9F1208U0B Advance FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initia.IS46LR32160B - 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32160B, IS46LR32160B 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32160B is 536,870,912 bits CMOS Mobile Double Data Rate Sy.K4M513233E-F1L - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M513233E - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. .MF84M1-GMCAVXX - 8/16-bit Data Bus Flash Memory Card
MITSUBISHI MEMORY CARD FLASH MEMORY CARDS MF82M1-GMCAVXX 8/16-bit Data Bus Flash Memory Card MF84M1-GMCAVXX MF88M1-GMCAVXX MF816M-GMCAVXX MF820M-GM.