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4N10ae

4N10ae DataSheet

Huajing Microelectronics

CS14N10A3 - Silicon N-Channel Power MOSFET

 · 15 Hits l Fast Switching l Low ON Resistance(Rdson≤150 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test A...
Inchange Semiconductor

4N10 - N-Channel MOSFET Transistor

 · 11 Hits ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) ·Fast Switching ·Minim...
UTC

4N100 - N-CHANNEL MOSFET

 · 8 Hits * RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.0A * High switching speed * High breakdown voltage  SYMBOL 2.Drain 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2 1 ...
Excelliance MOS

EMB14N10CS - MOSFET

 · 7 Hits ...
Excelliance MOS

EMB14N10H - MOSFET

 · 7 Hits ...
Excelliance MOS

EMB14N10F - MOSFET

 · 7 Hits ...
Fairchild Semiconductor

FDP054N10 - N-Channel MOSFET

 · 7 Hits • RDS(on) = 4.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(...
Excelliance MOS

EMD04N10E - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

 · 6 Hits mbient3 RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1％ 362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guar...
Fairchild Semiconductor

FQP44N10 - 100V N-Channel MOSFET

 · 6 Hits • • • • • • • 43.5A, 100V, RDS(on) = 0.039Ω @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche teste...
IXYS Corporation

IXTY44N10T - Power MOSFET

 · 6 Hits  International Standard Packages  175°C Operating Temperature  Avalanche Rated  Low RDS(on)  High Current Handling Capability Advantages  Easy t...
ON Semiconductor

NVMFWS004N10MC - N-Channel MOSFET

 · 6 Hits • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q10...
UTC

4N100-FC - N-CHANNEL POWER MOSFET

 · 6 Hits * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Cap...
Fairchild Semiconductor

FQH44N10_F133 - MOSFET

 · 5 Hits • 48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V • Low gate charge ( typical 48 nC) • Low Crss ( typical 85 pF) • Fast switching • 100% avalanche tested • Im...
Fairchild Semiconductor

FQH44N10 - MOSFET

 · 5 Hits • 48 A, 100 V, RDS(on) = 39 m (Max.) @ VGS = 10 V, ID = 24 A • Low Gate Charge (Typ. 48 nC) • Low Crss (Typ. 85 pF) • 100% Avalanche Tested • 175C M...
Fairchild Semiconductor

FQA44N10 - 100V N-Channel MOSFET

 · 5 Hits • • • • • • • 48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested ...
Fairchild Semiconductor

FQA44N10100 - 100V N-Channel MOSFET

 · 5 Hits • • • • • • • 48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested ...
Fairchild Semiconductor

FQAF44N10 - 100V N-Channel MOSFET

 · 5 Hits • • • • • • • 33A, 100V, RDS(on) = 0.039Ω @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested ...
Vanguard Semiconductor

VSI004N10MS-G - N-Channel Advanced Power MOSFET

 · 5 Hits  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  100% Avalanche Tested  Pb-f...
ON Semiconductor

NTBGS004N10G - N-Channel MOSFET

 · 5 Hits • Low RDS(on) • High Current Capability • Wide SOA • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Hot Swap i...
Infineon

IAUC24N10S5L300 - Power Transistor

 · 5 Hits • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on) ID 100 V 30 mW 24 A PG-TDSON-8 • N-channel - Enhancement mode - Logic level • AE...
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