A-Data Technology
ADS8616A8A-75 - Synchronous DRAM(4M X 16 Bit X 4 Banks)
(12 views)
Siemens Semiconductor Group
HYB3166165AT-60 - 4M x 16-Bit Dynamic RAM
4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-Version)
Advanced Information
• • • •
HYB 3164165AT(L) -40/-50/-60 HYB 3165165AT(L) -40/-50/-60 HYB
(11 views)
A-Data Technology
ADS8616A8A-75A - Synchronous DRAM(4M X 16 Bit X 4 Banks)
(9 views)
Siemens Semiconductor Group
HYB3166160ATL-50 - 4M x 16-Bit Dynamic RAM
4M x 16-Bit Dynamic RAM ( 8k, 4k & 2k Refresh)
HYB 3164160AT(L) -40/-50/-60 HYB 3165160AT(L) -40/-50/-60 HYB 3166160AT(L) -40/-50/-60
Advanced Infor
(9 views)
A-Data Technology
VDS7608A4A - Synchronous DRAM (4M x 8 Bit x 4 Banks)
V-Data
Synchronous DRAM
VDS7608A4A 4M x 8 Bit x 4 Banks
General Description
The VDS7608A4A are four-bank Synchronous DRAMs organized as 4,194,304 wo
(9 views)
A-Data Technology
ADS8616A8A - Synchronous DRAM(4M X 16 Bit X 4 Banks)
(8 views)
Siemens
HYM724000GS-50 - 4M x 72-Bit Dynamic RAM Module
4M × 72-Bit Dynamic RAM Module (ECC - Module )
HYM 724000GS-50/-60 HYM 724010GS-50/-60
Preliminary Information
• •
4 194 304 words by 72-bit ECC -
(8 views)
Siemens
HYS64-72V2200GU-8 - 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules
HYS64/72V2200GU-8/-10 HYS64/72V4220GU
(8 views)
Samsung Semiconductor
KM23V4000ETY - (KM23x4000xTY) 4M-Bit CMOS Mask ROM
KM23V4000D(E)TY/KM23S4000D(E)TY
4M-Bit (512Kx8) CMOS MASK ROM
FEATURES
• 524,288 x 8 bit organization • Fast access time 3.3V Operation : 100ns(Max.)
(8 views)
Samsung Semiconductor
KM23C32000AG - 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
(8 views)
Puya
PY25Q64HA - 64M-bit Serial Multi I/O Flash Memory
PY25Q64HA Datasheet V1.0
PY25Q64HA
Low Power, 64M-bit Serial Multi I/O Flash Memory Datasheet
Mar. 13, 2023
Performance Highlight
Wide Supply Range
(8 views)
Siemens Semiconductor Group
HYB3116400BT-60 - 3.3V 4M x 4-Bit Dynamic RAM
3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BJ/BT(L) -50/-60/-70 HYB3117400BJ/BT(L) -50/-60/-70
Advanced Information
• • •
4 194 304 words by 4-bit organ
(7 views)
Toshiba
TC58FVM6T2AFT65 - 64MBIT (8M x 8 BITS/4M x 16 BITS) CMOS FLASH MEMORY
TC58FVM6(T/B)2A(FT/XB)65
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
64MBIT (8M × 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY
DESCRIPTION
The
(7 views)
Hynix Semiconductor
HY27UF161G2M - (HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory
( DataSheet : www.DataSheet4U.com )
Preliminary HY27UF(08/16)1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Document
(7 views)
Samsung Semiconductor
KM23C32000BTY - 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
(7 views)
Elite Semiconductor
F59D1G161A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi
(7 views)
Bright Moon Semiconductor
T25S40 - 4M BIT SPI NOR FLASH
Bright Moon Semiconductor Co.,Ltd
T25S40
SPECIFICATION
T25S40
Version 2.0
reserves the right to change this documentation without prior notice.
Br
(7 views)
ABOV
A34M418 - 32-bit Microcontroller
A34M418, A34M416, A34M414
Features
32-bit Cortex-M4F based High-performance Microcontroller
Datasheet Version 1.01
Core High performance Cortex-M
(7 views)
Siemens Semiconductor Group
HYB3116400BT-70 - 3.3V 4M x 4-Bit Dynamic RAM
3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BJ/BT(L) -50/-60/-70 HYB3117400BJ/BT(L) -50/-60/-70
Advanced Information
• • •
4 194 304 words by 4-bit organ
(6 views)
Siemens Semiconductor Group
HYB3116400BTL-70 - 3.3V 4M x 4-Bit Dynamic RAM
3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BJ/BT(L) -50/-60/-70 HYB3117400BJ/BT(L) -50/-60/-70
Advanced Information
• • •
4 194 304 words by 4-bit organ
(6 views)
