ISSI
IS43LR32160C - 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43/46LR32160C
4M x 32Bits x 4Banks Mobile DDR SDRAM
Description
The IS43/46LR32160C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous D
Rating:
1
★
(8 votes)
ISSI
IS43LR32160B - 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32160B, IS46LR32160B
4M x 32Bits x 4Banks Mobile DDR SDRAM
Description
The IS43/46LR32160B is 536,870,912 bits CMOS Mobile Double Data Rate Sy
Rating:
1
★
(8 votes)
Bright Moon Semiconductor
T25S40 - 4M BIT SPI NOR FLASH
Bright Moon Semiconductor Co.,Ltd
T25S40
SPECIFICATION
T25S40
Version 2.0
reserves the right to change this documentation without prior notice.
Br
Rating:
1
★
(8 votes)
Siemens Semiconductor Group
PC100-323-620 - 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules
HYS64/72V2200GU-8/-10 HYS64/72V4220GU
Rating:
1
★
(6 votes)
STMicroelectronics
M27V320 - 32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM
M27V320
32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM
s
3.3V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 32
Rating:
1
★
(6 votes)
ISSI
IS45VM16160E - 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM16160E
4M x 16Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronou
Rating:
1
★
(6 votes)
Toshiba
TC58DVM92A5TA00 - 512M-BIT (64M x 8 BITS) CMOS NAND E2PROM
TC58DVM92A5TA00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
512-MBIT (64M × 8 BITS) CMOS NAND E2PROM
DESCRIPTION
The device is a single 3
Rating:
1
★
(6 votes)
Winbond
W25Q64JV - 3V 64M-BIT SERIAL FLASH MEMORY
W25Q64JV
3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL, QUAD SPI
For Industrial & Industrial Plus Grade
Publication Release Date: March 10, 2021 Revision K
Rating:
1
★
(6 votes)
ISSI
IS46LR32160C - 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43/46LR32160C
4M x 32Bits x 4Banks Mobile DDR SDRAM
Description
The IS43/46LR32160C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous D
Rating:
1
★
(6 votes)
Samsung
K4M513233E-F1L - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M513233E - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address.
Rating:
1
★
(6 votes)
Mitsubishi
M30624MGA-322FP - SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
Mitsubishi microcomputers
M16C / 62 Group
Description
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
Description
The M16C/62 group of single-chip microcomp
Rating:
1
★
(6 votes)
Macronix International
27C4096 - 4M-BIT [512K x 8/256K x 16] CMOS EPROM
MX27C4100/27C4096
4M-BIT [512K x 8/256K x 16] CMOS EPROM
FEATURES
• 256K x 16 organization(MX27C4096, JEDEC pin • • • •
out) 512K x 8 or 256K x 16 or
Rating:
1
★
(6 votes)
Macronix International
27C4100 - 4M-BIT [512K x 8/256K x 16] CMOS EPROM
MX27C4100/27C4096
4M-BIT [512K x 8/256K x 16] CMOS EPROM
FEATURES
• 256K x 16 organization(MX27C4096, JEDEC pin • • • •
out) 512K x 8 or 256K x 16 or
Rating:
1
★
(6 votes)
STMicroelectronics
M28W320FSB - 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply - Boot Block - Secure Flash Memories
www.DataSheet4U.com
M28W320FST, M28W320FSB, M28W640FSB, M28W640FST
32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories
Rating:
1
★
(6 votes)
Hyundai Electronics
HY512264 - Extended Data Out mode 4M bit dynamic RAM
HY512264
128Kx16, Extended Data Out mode
DESCRIPTION
This family is a 4M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. Th
Rating:
1
★
(6 votes)
Winbond
25Q64FWBIP - 1.8V 64M-BIT SERIAL FLASH MEMORY
W25Q64FW
1.8V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
Publication Release Date: March 25, 2013 Preliminary - Revision D
W25Q64FW
Table o
Rating:
1
★
(6 votes)
Winbond
25Q64FVSIG - 3V 64M-BIT SERIAL FLASH MEMORY
W25Q64FV
3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
Publication Release Date: July 18, 2017
-1
Revision S
W25Q64FV
Table of Contents
Rating:
1
★
(6 votes)
Winbond
W25Q64FVDAIG - 3V 64M-BIT SERIAL FLASH MEMORY
W25Q64FV
3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
Publication Release Date: July 18, 2017
-1
Revision S
W25Q64FV
Table of Contents
Rating:
1
★
(6 votes)
Sanyo Semicon Device
LE28FV4001T - 4MEG (52488 x 8 Bits) Flash Memory
Ordering number : EN*5468
CMOS LSI
LE28FV4001M, T, R-20/25
4MEG (52488 × 8 Bits) Flash Memory
Preliminary Overview
The LE28FV4001M, T, R Series are
Rating:
1
★
(5 votes)
Sanyo Semicon Device
LC78834M - Stereo 18-bit Digital Audio D/A Converter
Rating:
1
★
(5 votes)