25Q128FVSQ (Winbond)
3V 128M-BITSERIAL FLASH MEMORY
W25Q128FV
3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
Publication Release Date: May 13, 2016 Revision M
W25Q128FV
Table of Contents
1.
(33 views)
P3P4GF4BLF (Deutron Electronics)
4G Bits Die DDRIII SDRAM
4G B Die DDRIII SDRAM Specification
P3P4GF4BLF
Deutron Electronics Corp.
8F, 68, Sec. 3, NanKing E. RD., Taipei 104, Taiwan, R.O.C. TEL: (886)-2-251
(13 views)
25Q128FVIQ (Winbond)
3V 128M-BITSERIAL FLASH MEMORY
W25Q128FV
3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
Publication Release Date: May 13, 2016 Revision M
W25Q128FV
Table of Contents
1.
(12 views)
25Q128FVPQ (Winbond)
3V 128M-BITSERIAL FLASH MEMORY
W25Q128FV
3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
Publication Release Date: May 13, 2016 Revision M
W25Q128FV
Table of Contents
1.
(10 views)
GT24C16 (Giantec Semiconductor)
2-WIRE 16K Bits Serial EEPROM
GT24C16
GT24C16 2-WIRE 16K Bits
Serial EEPROM
Copyright © 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right
(9 views)
BL24C32A (BELLING)
32K-bits EEPROM
BL24C32A 32Kbits (4,096×8)
Features
Compatible with all I²C bidirectional data transfer protocol
Memory array: – 32 Kbits (4Kbytes) of EEPROM –
(9 views)
25Q128FVSG (Winbond)
3V 128M-BITSERIAL FLASH MEMORY
W25Q128FV
3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
Publication Release Date: May 13, 2016 Revision M
W25Q128FV
Table of Contents
1.
(9 views)
GT24C512B (Giantec Semiconductor)
2-WIRE 512K Bits Serial EEPROM
GT24C512B
Advanced
GT24C512B
2-WIRE
512K Bits
Serial EEPROM
Copyright © 2014 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec
(8 views)
W9825G6JH (Winbond)
4M X 4 BANKS X 16 BITS SDRAM
www.DataSheet.co.kr
W9825G6JH 4 M 4 BANKS 16 BITS SDRAM
Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION
(8 views)
SAA7350 (NXP)
20-BIT INPUT BITSTREAM CONVERSION DAC
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its R
(7 views)
E2505H42 (Agere Systems)
E2500-Type 2.5 Gbits/s Electroabsorption Moudlated Isolated Laser Module (EM-ILM) for Ultralong-Reach Applications
(6 views)
W9864G2IH (Winbond)
512K X 4 BANKS X 32BITS SDRAM
www.DataSheet.co.kr
W9864G2IH 512K × 4 BANKS × 32BITS SDRAM
Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION
(6 views)
W9864G2JH (Winbond)
512K X 4 BANKS X 32BITS SDRAM
www.DataSheet.co.kr
W9864G2JH 512K 4 BANKS 32BITS SDRAM
Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION
(6 views)
LY68L6400 (Lyontek)
64M Bits Serial Pseudo SRAM
Rev. 0.7 Preliminary
LY68L6400
64M Bits Serial Pseudo-SRAM with SPI and QPI
1 TABLE OF CONTENTS
1 TABLE OF CONTENTS
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0
(6 views)
GT24C32A (Giantec Semiconductor)
2-WIRE 32K Bits Serial EEPROM
GT24C32A
GT24C32A
2-WIRE
32K Bits
Serial EEPROM
Copyright © 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the
(5 views)
IS42VS16400E (ISSI)
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400E
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
MAY 2009
FEATURES
• Clock frequency: 133 MHz
• Fully synchronous; a
(5 views)
E2505H27 (Agere Systems)
E2500-Type 2.5 Gbits/s Electroabsorption Moudlated Isolated Laser Module (EM-ILM) for Ultralong-Reach Applications
(5 views)
IS46LR16640A (ISSI)
16M x 16Bits x 4Banks Mobile DDR SDRAM
IS43/46LR16640A
16M x 16Bits x 4Banks Mobile DDR SDRAM
Description
The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous
(5 views)
IS43LR16320B (ISSI)
8M x 16Bits x 4Banks Mobile DDR SDRAM
IS43LR16320B, IS46LR16320B
8M x 16Bits x 4Banks Mobile DDR SDRAM
Description
The IS43/46LR16320B is a 536,870,912 bits CMOS Mobile Double Data Rate
(5 views)
W986416DH (Winbond)
1M x 4 BANKS x 16-BITS SDRAM
W986416DH
GENERAL DESCRIPTION
1M × 4 BANKS × 16 BITS SDRAM
W986416DH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
(5 views)