.
Fairchild Semiconductor
IRF650 - 200V N-Channel MOSFET
IRF650B / IRFS650B IRF650B / IRFS650B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are p.
Fuji Electric
2MBI200VB-120-50 - IGBT
http://www.fujielectric.com/products/semiconductor/ 2MBI200VB-120-50 IGBT MODULE (V series) 1200V / 200A / 2 in one package Features High speed swi.
Fuji Electric
6MBI50S-120L - IGBT(1200V/6x50A)
6MBI 50S-120L IGBT MODULE ( S-Series ) n Features • NPT-Technologie • Solderable Package • Square SC SOA at 10 x IC • High Short Circuit Withstand-Cap.
Intersil Corporation
BYW51-150 - 8A/ 100V - 200V Ultrafast Dual Diodes
BYW51-100, BYW51-150, BYW51-200 June 1995 File Number 1412.2 8A, 100V - 200V Ultrafast Dual Diodes The BYW51 series devices are low forward voltage d.
Fuji Electric
6MBI50L-120 - IGBT(1200V 50A)
For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-381-9991 Fax http://www.collmer.com .
Fuji Electric
6MBI50S-120 - IGBT(1200V/50A)
6MBI50S-120 IGBT MODULE ( S series) 1200V / 50A 6 in one-package Features · Compact package · P.C.board mount · Low VCE(sat) IGBT Modules Applicatio.
Alpha & Omega Semiconductors
AOD4504 - 200V N-Channel MOSFET
AOD4504 200V N-Channel MOSFET General Description The AOD4504 combines advanced trench MOSFET technology with a low resistance package to provide ext.
PST
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YANGZHOU POSITIONING TECH. CO., LTD THYRISTOR-THYRISTOR MODULE MTC250A-4200V Feature ： Typical application： ● Chip and backplane electrical insulat.
Linear Technology
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LT1351 250µA, 3MHz, 200V/µs Operational Amplifier FEATURES s s s s s s s s s s s s s s s s s DESCRIPTION The LT ®1351 is a low power, high speed, hig.
Fairchild Semiconductor
IRF650B - 200V N-Channel MOSFET
IRF650B / IRFS650B IRF650B / IRFS650B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are p.
Fairchild
IRFP250B - 200V N-Channel MOSFET
IRFP250B November 2001 IRFP250B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc.
STMicroelectronics
TN3050H-12WY - 30A 1200V automotive grade SCR Thyristor
TN3050H-12WY Datasheet 30 A, 1200 V automotive grade SCR Thyristor A G K TAB = A G A K TO-247 uninsulated Product status TN3050H-12WY Product summa.
Taiwan Semiconductor
TSP15H150S - 120V - 200V Trench Schottky Rectifiers
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Fuji
7MBP200VEA120-50 - IGBT
http://www.fujielectric.com/products/semiconductor/ 7MBP200VEA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 200A / IPM Features • Temperatur.
Fuji Electric
6MBP200VDA060-50 - IGBT
http://www.fujielectric.com/products/semiconductor/ 6MBP200VDA060-50 IGBT Modules IGBT MODULE (V series) 600V / 200A / IPM Features • Temperature.
Fuji Electric
7MBP200VDA060-50 - IGBT
http://www.fujielectric.com/products/semiconductor/ 7MBP200VDA060-50 IGBT Modules IGBT MODULE (V series) 600V / 200A / IPM Features • Temperature.
Fuji Electric
6MBP200VEA060-50 - IGBT
http://www.fujielectric.com/products/semiconductor/ 6MBP200VEA060-50 IGBT Modules IGBT MODULE (V series) 600V / 200A / IPM Features • Temperature.
Fuji Electric
7MBP200VEA060-50 - IGBT
http://www.fujielectric.com/products/semiconductor/ 7MBP200VEA060-50 IGBT Modules IGBT MODULE (V series) 600V / 200A / IPM Features • Temperature.
Fuji Electric
6MBP200VEA120-50 - IGBT
http://www.fujielectric.com/products/semiconductor/ 6MBP200VEA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 200A / IPM Features • Temperatur.
