www.DataSheet4U.com FQB13N50C/FQI13N50C QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power fi

Parameters Subject to Change Without Notice JW1795 500V MOS LED JW1795 500V MOS，、 LED 。 ，， ，。 JW1795 ，， 。 JW1795， 0.1S，LED。 ， ，，LED， LED。 Com

IA/IE-1W～2W Series Features u Operating temperature: -40 to +85℃ u ±5/±9/±12/±15Vdc multiple voltage output u International standard pin-out u 100% b

CMH20N50 500V N-Channel MOSFET General Description Product Summery These N-Channel enhancement mode power field effect transistors are produced us

JW1779 Parameters Subject to Change Without Notice Integrated 500V MOS Non-isolated Buck LED Driver DESCRIPTION FEATURES JW1779 is a non-isolated

20N40H-VB TO220 20N40H-VB TO220 Datasheet N-Channel 500-V (D-S) Super Junction MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at

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HM20N50A HM20N50A 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. Th

IA/IE-1W～2W Series Features u Operating temperature: -40 to +85℃ u ±5/±9/±12/±15Vdc multiple voltage output u International standard pin-out u 100% b

JW1792 Parameters Subject to Change Without Notice Integrated 500V MOS Non-isolated Buck LED Driver DESCRIPTION JW1792 is a non-isolated, constant

IRFP460C February 2002 IRFP460C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

SVF20N50F/PN_Datasheet 20A 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF20N50F/PN is an N-channel enhancement mode power MOS field effect transistor w

www.vishay.com IHXL-1500VZ-5A Vishay Dale High Current Through-Hole Inductor, High Temperature FEATURES • High temperature, up to 155 °C • Shielded

R5009ANX Nch 500V 9A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD lFeatures 1) Low on-resistance. 500V 0.72W 9A 50W lOutline TO-220FM lInner

HM15N50/HM15N50F HM15N50/HM15N50F 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMO

HM840 / HM840F +0840 / +0840F 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS te

FDD6N50TM_F085 500V N-Channel MOSFET FDD6N50TM_F085 500V N-Channel MOSFET Features • 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V • Low gate charge ( typical

FQD3P50TM_F085 500V P-Channel MOSFET November 2010 FQD3P50TM_F085 500V P-Channel MOSFET General Description These P-Channel enhancement mode power f

CRM50TD06R1 () 500V 6A half-bridge Modules Description CRM50TD06R1 is half-bridge Modules (IPM) designed for advanced appliance motor drive applic

General Description This Power MOSFET is producFeeadtuurseisng H&M Semi’s Advanced Super-Junction This advanced technology theacsh--nb7Lo.oe6wlAeo,