500V Datasheet | Specifications & PDF Download

www.DataSheet4U.com FQB13N50C/FQI13N50C QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power fi

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IA/IE-1W～2W Series Features u Operating temperature: -40 to +85℃ u ±5/±9/±12/±15Vdc multiple voltage output u International standard pin-out u 100% b

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20N40H-VB TO220 20N40H-VB TO220 Datasheet N-Channel 500-V (D-S) Super Junction MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at

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IA/IE-1W～2W Series Features u Operating temperature: -40 to +85℃ u ±5/±9/±12/±15Vdc multiple voltage output u International standard pin-out u 100% b

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HM840 / HM840F +0840 / +0840F 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS te

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HM840 / HM840F +0840 / +0840F 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS te

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5A, 500V N-CHANNEL POWER MOSFET GENERAL DESCRIPTION This N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s pro

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MOSFET – N-Channel, UniFETt, FRFET) 500 V, 24 A, 200 mW FDA24N50F Description UniFET MOSFET is onsemi’s high voltage MOSFET family based on planar str

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CMH20N50 500V N-Channel MOSFET General Description Product Summery These N-Channel enhancement mode power field effect transistors are produced us

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Parameters Subject to Change Without Notice JW1795 500V MOS LED JW1795 500V MOS，、 LED 。 ，， ，。 JW1795 ，， 。 JW1795， 0.1S，LED。 ， ，，LED， LED。 Com

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SVF13N50T/F/PN_Datasheet 13A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF13N50T/F/PN is an N-channel enhancement mode power MOS field effect trans

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MDF12N50 N-channel MOSFET 500V MDF12N50 N-Channel MOSFET 500V, 11.5 A, 0.65Ω General Description The MDF12N50 uses advanced MagnaChip’s MOSFET Techno

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500V N-Channel MOSFET General Features Proprietary New Planar Technology RDS(ON),typ.=0.24 Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Reco

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Feb 2009 PFP18N50/PFF18N50 FEATURES ‰ Originative New Design ‰ 100% EAS Test ‰ Rugged Gate Oxide Technology ‰ Extremely Low Intrinsic Capacitances ‰

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CRMT5004E1 () 500V 6A 3-phase Integrated Power Modules Description CRMT5004E1 is 3-phase Integrated Power Modules (IPM) designed for advanced appl

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