550V Datasheet | Specifications & PDF Download

BL8003 550V INTEGRATED HALF –BRIDGE DRIVER Description Features The BL8003 is an integrated high-speed half bridge power MOSFET driver. Our propri

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SVM1550VB ULTRA LOW VF SCHOTTKY RECTIFIER VOLTAGE 50 Volt CURRENT 15 Ampere FEATURES • Ideal for automated placement • Ultra low forward voltage d

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2SK3101-VB 2SK3101-VB Datasheet N-Channel 550V (D-S) Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC)

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FS16KM-10-VB FS16KM-10-VB Datasheet N-Channel 550V (D-S) Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs

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LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB550V-30T1GG zApplications G eneral rectification zFeatures 1) Small surface mounting type. 2)

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes RB550V-30 Schottky Barrier Diode FEATURES z Small Surface Mount

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Schottky Barrier Diode RB550VA-30 Data Sheet lApplications General rectification lFeatures 1)Small mold type（TUMD2） 2)Low VF, Low IR 3)High reliabil

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http://www.fujielectric.com/products/semiconductor/ 2MBI550VN-170-50 IGBT Modules IGBT MODULE (V series) 1700V / 550A / 2 in one package Features

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Schottky Barrier Diode RB550VM-40 Data Sheet lApplication Small current rectification lFeatures 1) Small mold type (UMD2) 2) High reliability 3) Low

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RB550VAM-30 Schottky Barrier Diode 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VR 30 V Io 1 A IFSM 5 A ●Features High reliability Smal

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LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB550V-30T1GG zApplications G eneral rectification zFeatures 1) Small surface mounting type. 2)

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SVM1550V ULTRA LOW VF SCHOTTKY RECTIFIER VOLTAGE 50 Volt CURRENT 15 Ampere FEATURES • Ideal for automated placement • Ultra low forward voltage dr

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Jingdao Microelectronics co.LTD RB550VFL-30 SCHOTTKY BARRIER RECTIFIERS FEATURES • Metal silicon junction, majority carrier conduction • Guarding f

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INTEGRATED CIRCUITS DIVISION MX6895 -550V Full Bridge Gate Driver Features • Full Bridge Gate Driver • Internal High Voltage Level Shift Function •

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RB550VYM-30FH Schottky Barrier Diode (AEC-Q101 qualified) Data sheet 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VR 30 V Io 1 A IFSM

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Freescale Semiconductor Data Sheet: Technical Data Document Number: MC56F8455X Rev. 3, 06/2014 MC56F8455X / MC56F8454X Supports the 56F84553VLH, 56F

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Freescale Semiconductor Data Sheet: Technical Data Document Number: MC56F8455X Rev. 3, 06/2014 MC56F8455X / MC56F8454X Supports the 56F84553VLH, 56F

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Freescale Semiconductor Data Sheet: Technical Data Document Number: MC56F8455X Rev. 3, 06/2014 MC56F8455X / MC56F8454X Supports the 56F84553VLH, 56F

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Freescale Semiconductor Data Sheet: Technical Data Document Number: MC56F8455X Rev. 3, 06/2014 MC56F8455X / MC56F8454X Supports the 56F84553VLH, 56F

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UNISONIC TECHNOLOGIES CO., LTD 3N55-CDQ Preliminary 3A, 550V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N55-CDQ is an N-channel power MOSFET us

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