6007-xxxx Datasheet | Specifications & PDF Download

PT6007 4～7 / PT6007 4～7 /、 ， ，，/ 。 ±25mV 。±10mV 。 PT6007 。 PT6007 N MOSFET N MOSFET， CCTL DCTL ， MOSFETs。 PT6007 。 PT6007 。  、   

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R6007JNX 　　Nch 600V 7A Power MOSFET 　　 Datasheet lOutline VDSS 600V TO-220FM 　 RDS(on)(Max.) 0.780Ω 　 ID ±7A 　 PD 46W 　 　 　　　　　　 lFe

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RDH600 Series DC-DC Converter 600 Watts xxx Series• Wide 4:1 Input Range • Covers 72 & 110 VDC for Rail Applications • Complies with EN50155 • Meets

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RDH600 Series DC-DC Converter 600 Watts xxx Series• Wide 4:1 Input Range • Covers 72 & 110 VDC for Rail Applications • Complies with EN50155 • Meets

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RDH600 Series DC-DC Converter 600 Watts xxx Series• Wide 4:1 Input Range • Covers 72 & 110 VDC for Rail Applications • Complies with EN50155 • Meets

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RDH600 Series DC-DC Converter 600 Watts xxx Series• Wide 4:1 Input Range • Covers 72 & 110 VDC for Rail Applications • Complies with EN50155 • Meets

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www.DataSheet4U.com CLT-18-6007 Temperature Compensated Amplifier 6 GHz - 18 GHz This Amplifier offers exceptional performance over the band 6 GHz

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NTE6006 thru NTE6011 Fast Recovery Rectifier, 40A, 200ns Description: The NTE6006 through NTE6011 are fast recovery silicon rectifiers in a DO5 type p

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UD6007 P-Ch 60V Fast Switching MOSFETs General Description The UD6007 is the highest performance trench P-ch MOSFETs with extreme high cell density ,

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ACMD-6007 LTE Band 7 Duplexer Data Sheet Description The Avago ACMD-6007 is a highly miniaturized duplexer designed for use in LTE Band 7 (2500 – 25

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Datasheet 400KHz 60V 2A Switching Current Boost DC/DC Converter XL6007 Features  Wide 3.6V to 24V Input Voltage Range  Positive or Negative Outpu

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QM6007D P-Ch 60V Fast Switching MOSFETs General Description The QM6007D is the highest performance trench P-ch MOSFETs with extreme high cell density

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QM6007K P-Ch 60V Fast Switching MOSFETs General Description The QM6007K is the highest performance trench P-ch MOSFETs with extreme high cell density

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QM6007S P-Ch 60V Fast Switching MOSFETs General Description The QM6007S is the highest performance trench P-ch MOSFETs with extreme high cell density

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Main Product Characteristics: VDSS -50V RDS(on) 2.1Ω(typ.) ID -130mA SOT-23 Features and Benefits:  Advanced MOSFET process technology  Speci

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CGHV60075D5 75 W, 6.0 GHz, GaN HEMT Die Cree’s CGHV60075D5 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior prope

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isc N-Channel MOSFET Transistor R6007JNX FEATURES ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resi

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