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67-21S-KK2C-H6060R1R42835Z15-2T - SMD / Low Power LED
SMD Low Power LED 67-21S/KK2C-HXXXXXXXX2835Z15/2T Features ‧PLCC-2 package ‧Top view white LED High luminous intensity output Wide viewing angle Pb.6060R - N-Channel Enhancement Mode Field Effect Transistor
.MBR6060R - (MBR6045 - MBR60100R) Schottky Power Diode
Naina Semiconductor Ltd. Schottky Power Diode, 60A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, l.CEB6060R - N-Channel Enhancement Mode Field Effect Transistor
CEP6060R/CEB6060R N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for e.CEP6060R - N-Channel Enhancement Mode Field Effect Transistor
CEP6060R/CEB6060R N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for e.CHM6060RPAPT - N-Channel Enhancement Mode Field Effect Transistor
CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHM6060RPAPT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 30 Ampere APPLI.CED6060R - N-Channel MOSFET
CED6060R/CEU6060R N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 30A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for e.CEU6060R - N-Channel MOSFET
CED6060R/CEU6060R N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 30A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for e.MBR6060R - (MBR6020 - MBR60100) SCHOTTKY DIODES
Transys Electronics L I M I T E D MBR6020(R) THRU MBR60100(R) SCHOTTKY DIODES STUD TYPE 60 A 60Amp Rectifier 20-100 Volts Features High Surge Capa.MBR6060R - Silicon Power Schottky Diode
Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .MBR6060R - Silicon Power Schottky Diode
Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is .