PGE60831 (Ericsson)
EDFA Gain Block for DWDM Applications
PGE 608 31
EDFA Gain Block for DWDM Applications
Key Features
• Operating wavelength window: 1530-1560 nm • Operating temperature range: -5 °C to +7
(37 views)
2N6083 (SSM)
VHF Communications Transistor
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(36 views)
PGE60830 (Ericsson)
EDFA Gain Block for DWDM Applications
PGE 608 30
EDFA Gain Block for DWDM Applications
Key Features
• Operating wavelength window: 1540-1560 nm • Operating temperature range: -5 °C to 70
(34 views)
NTE6083 (NTE Electronics)
Schottky Barrier Rectifier
NTE6083 Schottky Barrier Rectifier
Features: D Low Power Loss, High Efficiency D High Current Capability, Low VF D High Surge Capacity Applications: D
(30 views)
IL6083N-01 (Integral)
PULSE WIDTH MODULATION MICROCIRCUIT OF POWER MOS TRANSISTOR
IL6083N, IL6083N-01
МИКРОСХЕМА ШИМ КОНТРОЛЛЕРА МОЩНОГО МОП ТРАНЗИСТОРА.
Микросхема является ИС ШИМ контроллера для управления мощным N– канальным МОП
(30 views)
IL6083N (Integral)
PULSE WIDTH MODULATION MICROCIRCUIT OF POWER MOS TRANSISTOR
IL6083N, IL6083N-01
МИКРОСХЕМА ШИМ КОНТРОЛЛЕРА МОЩНОГО МОП ТРАНЗИСТОРА.
Микросхема является ИС ШИМ контроллера для управления мощным N– канальным МОП
(27 views)
HPC16083 (National Semiconductor)
High-Performance microControllers
HPC16083 HPC26083 HPC36083 HPC46083 HPC16003 HPC26003 HPC36003 HPC46003 High-Performance microControllers
PRELIMINARY
April 1994
HPC16083 HPC26083 H
(26 views)
K4H560838A-TCA2 (Samsung)
128Mb DDR SDRAM
128Mb DDR SDRAM
DDR SDRAM Specification Version 1.0
- 1 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Revision History
Version 0 (May, 1998) - Firs
(26 views)
K4H560838A-TLB0 (Samsung)
128Mb DDR SDRAM
128Mb DDR SDRAM
DDR SDRAM Specification Version 1.0
- 1 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Revision History
Version 0 (May, 1998) - Firs
(26 views)
2SC6083A (Sanyo Semicon Device)
NPN Triple Diffused Planar Silicon Transistor
www.DataSheet4U.com
Ordering number : ENA0900
2SC6083A
SANYO Semiconductors
DATA SHEET
2SC6083A
Features
• • • •
NPN Triple Diffused Planar Sili
(26 views)
MB1608301Y5x (ABC Taiwan Electronics)
MULTILAYER CHIP BEAD
SPECIFICATION FOR APPROVAL
REF : PROD. NAME PAGE: 1
MULTILAYER CHIP BEAD CONFIGURATION & DIMENSIONS ¡G
A
ABC'S DWG NO. ABC'S ITEM NO.
MB1608□□□□5□
(26 views)
K4H560838B-TCA2 (Samsung)
128Mb DDR SDRAM
128Mb DDR SDRAM
DDR SDRAM Specification Version 1.0
- 1 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Revision History
Version 0 (May, 1998) - Firs
(25 views)
K4H560838B-TCB0 (Samsung)
128Mb DDR SDRAM
128Mb DDR SDRAM
DDR SDRAM Specification Version 1.0
- 1 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Revision History
Version 0 (May, 1998) - Firs
(25 views)
LA6083M (Sanyo)
J-FET Input Dual Operational Amplifier
(24 views)
K4H560838A-TCA0 (Samsung)
128Mb DDR SDRAM
128Mb DDR SDRAM
DDR SDRAM Specification Version 1.0
- 1 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Revision History
Version 0 (May, 1998) - Firs
(23 views)
2N6083 (Microsemi Corporation)
RF & MICROWAVE TRANSISTORS
(23 views)
U6083B (TEMIC Semiconductors)
PWM Power Control with Interference Suppression
U6083B
PWM Power Control with Interference Suppression
Description
The U6083B is a PWM IC in bipolar technology for the control of an N-channel power
(22 views)
2SC6083 (Sanyo Semicon Device)
NPN Triple Diffused Planar Silicon Transistor
www.DataSheet4U.com
Ordering number : ENA0899
2SC6083
SANYO Semiconductors
DATA SHEET
2SC6083
Features
• • • •
NPN Triple Diffused Planar Silico
(22 views)
MB1608300Y5x (ABC Taiwan Electronics)
MULTILAYER CHIP BEAD
SPECIFICATION FOR APPROVAL
REF : PROD. NAME PAGE: 1
MULTILAYER CHIP BEAD CONFIGURATION & DIMENSIONS ¡G
A
ABC'S DWG NO. ABC'S ITEM NO.
MB1608□□□□5□
(22 views)
K4S560832E-UC75 (Samsung)
SDRAM 256Mb E-die
SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
256Mb E-die SDRAM Specification
54 TSOP-II with Pb-Free (RoHS compliant)
Revision 1.3 August 2004
* Sams
(21 views)