64-Megabit Datasheet | Specifications & PDF Download

EN25S64A (2SC) EN25S64A (2SC) 64 Megabit 1.8V Serial Flash Memory with 4Kbyte UniformpSreelcimtoirnary FEATURES  Single power supply operation - Fu

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www.DataSheet4U.com Features • • • • • • • • • • Single-voltage Operation Read/Write Operation: 2.7V to 3.6V (BV). 3.0V to 3.6V(LV) Fast Read Access

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www.DataSheet4U.com ADVANCE INFORMATION S29GLxxxA MirrorBit™ Flash Family S29GL064A, S29GL032A 64 Megabit, 32 Megabit 3.0, Volt-only Page Mode Flash

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EN25QH64A EN25QH64A preliminary 64 Megabit 3V Serial Flash Memory with 4Kbyte Uniform Sector FEATURES  Single power supply operation - Full volta

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Features www.DataSheet4U.com • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • •

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Features • • • • www.DataSheet4U.com Single Voltage Operation Read/Write: 2.65V - 3.6V 2.7V - 3.6V Read/Write Access Time – 70 ns Sector Erase Archite

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ACT–F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module Features CIRCUIT TECHNOLOGY www.aeroflex.com/act1.htm s 4 Low Voltage/Power AM

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AT27C1024 Features • Fast Read Access Time - 45 ns • Low Power CMOS Operation • – 100 µA max. Standby – 30 mA max. Active at 5 MHz JEDEC Standard Pack

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ADVANCE INFORMATION Am29DL640D 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERIST

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Am29DL640H Data Sheet For new designs, S29JL064H supersedes Am29DL640H and is the factory-recommended migration path for this device. Please refer to

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PRELIMINARY Am29DL640G 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS ARC

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S29JL064H 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory Distinctive Characteristics Architectural Adv

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Features www.DataSheet4U.com • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • •

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Features www.DataSheet4U.com • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • •

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Features www.DataSheet4U.com • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • •

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Features • • • • www.DataSheet4U.com Single Voltage Operation Read/Write: 2.65V - 3.6V 2.7V - 3.6V Read/Write Access Time – 70 ns Sector Erase Archite

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~EDI 64Kx16 Static RAM CMOS, Module EDI8M1664C501601701851100 Megabit SRAM Module, JEDEC Pinout Features The EDI8M1664C isa high speed 64Kx16 CMOS S

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~EDI 64Kx16 Static RAM CMOS, Module EDI8M1664C501601701851100 Megabit SRAM Module, JEDEC Pinout Features The EDI8M1664C isa high speed 64Kx16 CMOS S

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Features • Single 2.7V - 3.6V Supply • Dual-interface Architecture • • • • • • • • • – Dedicated Serial Interface (SPI Modes 0 and 3 Compatible) – Ded

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Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time - 45 ns Internal Program Control and Timer 8K

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