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EN25QH64A - 64 Megabit 3V Serial Flash Memory
EN25QH64A EN25QH64A preliminary 64 Megabit 3V Serial Flash Memory with 4Kbyte Uniform Sector FEATURES Single power supply operation - Full volta.AT45DB642D - 64-megabit 2.7V Dual-interface DataFlash
Features • Single 2.7V - 3.6V Supply • Dual-interface Architecture – RapidS Serial Interface: 66MHz Maximum Clock Frequency SPI Compatible Modes 0 and.ACT-F2M32A - High Speed 64 Megabit Sector Erase FLASH Multichip Module
ACT–F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module Features CIRCUIT TECHNOLOGY www.aeroflex.com/act1.htm s 4 Low Voltage/Power AM.AM29LV641D - 64 Megabit CMOS 3.0 Volt-only Uniform Sector Flash Memory
.AT29C1024 - 1 Megabit 64K x 16 5-volt Only CMOS Flash Memory
AT29C1024 Features • • • • • • • • • • • • Fast Read Access Time - 70 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram (.27C1024 - 1-Megabit 64K x 16 OTP EPROM
AT27C1024 Features • Fast Read Access Time - 45 ns • Low Power CMOS Operation • – 100 µA max. Standby – 30 mA max. Active at 5 MHz JEDEC Standard Pack.AM29DL640H - 64 Megabit CMOS 3.0 Volt-only / Simultaneous Read/Write Flash Memory
Am29DL640H Data Sheet For new designs, S29JL064H supersedes Am29DL640H and is the factory-recommended migration path for this device. Please refer to.EN29LV640A - 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory
EN29LV640A 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only EN29LV640A FEATURES • Single power suppl.AT49F1025 - 1-Megabit 64K x 16 5-volt Only Flash Memory
Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time - 45 ns Internal Program Control and Timer 8K.ACTF2M32A - ACT-F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module
ACT–F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module Features CIRCUIT TECHNOLOGY www.aeroflex.com/act1.htm s Ready/Busy output (RY/BY).AM27X1024 - 1 Megabit (64 K x 16-Bit) CMOS ExpressROM Device
FINAL Am27X1024 1 Megabit (64 K x 16-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS s As an OTP EPROM alternative: — Factory optimized progr.AT27C1024 - 1-Megabit 64K x 16 OTP EPROM
AT27C1024 Features • Fast Read Access Time - 45 ns • Low Power CMOS Operation • – 100 µA max. Standby – 30 mA max. Active at 5 MHz JEDEC Standard Pack.AM29LV642D - 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
Am29LV642D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fuj.AM29LV065D - 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control
Am29LV065D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fuj.AT49BV1024A - (AT49LV1024A / AT49BV1024A) 1-megabit (64K x 16) 3-volt Only Flash Memory
www.DataSheet4U.com Features • • • • • • • • • • Single-voltage Operation Read/Write Operation: 2.7V to 3.6V (BV). 3.0V to 3.6V(LV) Fast Read Access .AM42DL640AG - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 64 Megabit
www.DataSheet4U.com Am42DL640AG Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced.AT29LV1024 - 1 Megabit 64K x 16 3-volt Only CMOS Flash Memory
AT29LV1024 Features • • • • • • • • • • • • Single Voltage, Range 3V to 3.6V Supply 3-Volt-Only Read and Write Operation Software Protected Programm.AT45DB642D - 64-megabit 2.7-volt Dual-interface DataFlash
Features • Single 2.7V - 3.6V Supply • Dual-interface Architecture – RapidS Serial Interface: 66 MHz Maximum Clock Frequency SPI Compatible Modes 0 an.S29JL064H - 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only
S29JL064H 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory Distinctive Characteristics Architectural Adv.AT49BV640DT - 64-megabit (4M x 16) 3-volt Only Flash Memory
Features www.DataSheet4U.com • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • .