679-6 Datasheet | Specifications & PDF Download

AON6794 30V N-Channel SRFET General Description • Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and H

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NB679A 28V, Low IQ, Fixed 5.1V, 8A, Synchronous Buck Converter with 100mA LDO and LP# VOUT Scaling DESCRIPTION The NB679A is a fully integrated, high

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/08/04 REVISED DATE :2006/10/27C GSC6679 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS

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H Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications Technical Data 4N55* 5962-87679 HCPL-553X HCPL-653X HCPL-65

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( DataSheet : www.DataSheet4U.com ) CMOS IC LC876796B/80B/72B 8-Bit Single Chip Microcontroller LC876796B 8 bit Single Chip Microcontroller incorpo

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www.DataSheet4U.com 2N6792 Dimensions in mm (inches). 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) N-Channel MOSFET i

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www.DataSheet4U.com AP6679GH/J RoHS-compliat Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET D Advanced Power Electronics Corp. ▼ Lower On-resistanc

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D TYPE SOCKET ASSEMBLIES E10679, E10679-50 The E10679 and E10679-50 are D-type socket assemblies for the R9880U series metal package photomultiplier

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AP6679BGH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼

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DATA SHEET SKY13585-679LF: 1.0 to 6.0 GHz SPDT Switch Applications  WLAN 802.11 a/b/g/n/ac networks  WLAN repeaters  ISM band radios  Low power t

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD679 DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 70V(Min) ·L

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community LM2679 SNVS026O – MARCH 2000 – REVISED JUNE 2016 LM2679 SIMP

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FDS6679AZ P-Channel PowerTrench® MOSFET FDS6679AZ P-Channel PowerTrench® MOSFET -30V, -13A, 9mΩ General Description This P-Channel MOSFET is product

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NCT6791D Nuvoton LPC I/O Date: January 8th, 2016 Revision 1.11 NCT6791D Table of Contents – 1. GENERAL DESCRIPTION

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ERU chokes ERU 25, helically wound Series/Type: Date: B82559*A025 February 2016 a~í~=pÜÉÉí ¤EPCOS AG 2016. Reproduction, publication and dissemi

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2N6796 MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) TMOS FET TRANSISTOR N – CH

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2N6796LCC4 MECHANICAL DATA Dimensions in mm (inches) 1.27 (0.050) 1.07 (0.040) 9.14 (0.360) 8.64 (0.340) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040)

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2N6796, 2N6798, 2N6800, 2N6802 Available on commercial versions N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switch

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WWW.Microsemi .COM SCOTTSDALE DIVISION 1N4678 thru 1N4717-1 DO-7 500 mW AXIAL-LEADED ZENER DIODES DESCRIPTION The 1N4678 thru 1N4717 series of 0.5

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