6A07 Datasheet | Specifications & PDF Download

LT6A01 - LT6A07 Features · · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 400A Peak Low Rever

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ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V Max RDS(ON) 250mΩ @ VGS = 10V 350mΩ @ VGS = 4.5V Max ID TA = +25°C (Note

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Type 381LX / 383LX 105 °C High Ripple, Snap-In Aluminum High Ripple, Long Life, 2, 4 and 5 pin styles available Specifications Temperature Range Rate

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︳ FEATURES * 7.5W Isolated Output * 24-Pin DIP Package * Efficiency to 87% * 2:1 Input Range * Regulated Outputs * Pi Input Filter * Continuous Short

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ZXMN6A07ZTA www.VBsemi.com ZXMN6A07ZTA N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.076 at VGS = 10 V 60 0.088 at VGS = 4.5

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ICs for TV AN96A07K Dynamic Focus Controller IC for CRT Monitor s Overview The AN96A07K is a dynamic astigmatizm and focus (DAF)IC for CRT monitor. I

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ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V(BR)DSS = -60V

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www.DataSheet4U.com A Product Line of Diodes Incorporated ZXMHC6A07N8 60V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V(BR)DS

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ADVANCE INNEFWORPRMOADTIUOCNT Green ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Device N-Channel P-Channel BVDS

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ZXMN6A07Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 100V; RDS(ON)= 0.4 ID= 1.9A DESCRIPTION This new generation of TRENCH MOSFETs fro

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www.DataSheet.co.kr ZXMHN6A07T8 60V N-CHANNEL MOSFET H-BRIDGE SUMMARY V(BR)DSS= 60V : RDS(on)= 0.3 ; ID= 1.6A DESCRIPTION This new generation of tre

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A Product Line of Diodes Incorporated Green ZXMHN6A07T8 60V N-CHANNELZMXOMSFHETNH6-BARI0DGE Product Summary BVDSS 60V RDS(ON) (Ω) 0.3 @ VGS = 10

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LITE-ON SEMICONDUCTOR PLASTIC SILICON RECTIFIERS LT6A01 thru LT6A07 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 6.0 Amperes FEATURES Low co

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