| Part Number | Description | Manufacture |
|---|---|---|
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MOSFET Z( J= L\_iXeUbk& ;WTcgXe& F= " JJ MO& F\Z[g\aZ& LXeiXe& MX_XVb` and NJL( =C4-'D'006-# =C5-'D'006=CC-'D'006- =CI-'D'006- ALEI ZSX ) DNB ZSX ( MJOL@B ZSX * J_XTfX abgX4 @be GIL@?M cTeT__X_\aZ g[X hfX bY YXee\gX UXTWf ba g[X ZTgX be fXcTeTgX gb |
 Infineon Technologies |
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MOSFET •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforindustrialgradeapplicationsaccord |
 Infineon |
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Power Transistor • Worldwide best R ds,on in TO220 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max |
Infineon |
