7N65E Datasheet | Specifications & PDF Download

PFP7N65E / PFF7N65E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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R SEMICONDUCTOR 7N65 7N65F 7N65D 7N65E 7N65M 7N65N 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<1.5Ω @ VGS=10V ● Fast switching capability ● Low g

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N R N-CHANNEL MOSFET JCS7N65E MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ 7.0 A 650 V 1.1 Ω 23 nC    LED APPLI

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www.vishay.com SiHJ7N65E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC)

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PFP7N65E / PFF7N65E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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