.
Toshiba
TC58FVB800 - 8 MBIT (1M x 8 BITS / 512K x 16 BITS) CMOS FLASH MEMORY
.
ISSI
IS43LR32160C - 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43/46LR32160C 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32160C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous D.
ISSI
IS43LR32160B - 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32160B, IS46LR32160B 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32160B is 536,870,912 bits CMOS Mobile Double Data Rate Sy.
Winbond
25Q128FVSQ - 3V 128M-BITSERIAL FLASH MEMORY
W25Q128FV 3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI Publication Release Date: May 13, 2016 Revision M W25Q128FV Table of Contents 1..
ISSI
IS46LR32160C - 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43/46LR32160C 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32160C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous D.
BELLING
BL24C32A - 32K-bits EEPROM
BL24C32A 32Kbits (4,096×8) Features Compatible with all I²C bidirectional data transfer protocol Memory array: – 32 Kbits (4Kbytes) of EEPROM – .
Texas Instruments
LSF0204D - 4-Bits Bidirectional Multi-Voltage Level Translator
LSF0204, LSF0204D SLVSCP5H – JULY 2014 – REVISED APRIL 2021 LSF0204x 4-Bits Bidirectional Multi-Voltage Level Translator for Open-Drain and Push-Pull .
Sanyo Semicon Device
LE28FV4001T - 4MEG (52488 x 8 Bits) Flash Memory
Ordering number : EN*5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series are .
ISSI
IS42VM32160E - 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32160E are mobile 536,870,912 bits CMOS Synchronou.
ISSI
IS45VM32800E - 2M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronou.
ISSI
IS45VM32400G - 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronou.
ISSI
IS42VM32400G - 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronou.
Agere Systems
E2505H28 - E2500-Type 2.5 Gbits/s Electroabsorption Moudlated Isolated Laser Module (EM-ILM) for Ultralong-Reach Applications
.
Agere Systems
E2505H57 - E2500-Type 2.5 Gbits/s Electroabsorption Moudlated Isolated Laser Module (EM-ILM) for Ultralong-Reach Applications
.
ISSI
IS46LR32800G - 2M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32800G, IS46LR32800G 2M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32800G is 268,435,456 bits CMOS Mobile Double Data Rate Syn.
ISSI
IS43LR32640A - 16M x 32Bits x 4Banks Mobile DDR SDRAM
IS43/46LR32640A 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous.
ISSI
IS46LR32640A - 16M x 32Bits x 4Banks Mobile DDR SDRAM
IS43/46LR32640A 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous.
ISSI
IS43LR32200C - 512K x 32Bits x 4Banks Mobile DDR SDRAM
IS43/46LR32200C 512K x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32200C is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous D.
ISSI
IS43LR32200B - 512K x 32Bits x 4Banks Mobile DDR SDRAM
IS43/46LR32200B 512K x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32200B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous D.
ISSI
IS43LR16640A - 16M x 16Bits x 4Banks Mobile DDR SDRAM
IS43/46LR16640A 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous.