.
Superworld Electronics
Z0M220-RE-10 - FERRITE CHIP BEADS
FERRITE CHIP BEADS Z0 SERIES 1. PART NO. EXPRESSION : Z0K121-RB-10 (a)(b)(c) (d) (e)(f) (g) (a) Series code (b) Dimension code (c) Material code (d.
Superworld Electronics
Z0M220-RE-11 - FERRITE CHIP BEADS
FERRITE CHIP BEADS Z0 SERIES 1. PART NO. EXPRESSION : Z0K121-RB-10 (a)(b)(c) (d) (e)(f) (g) (a) Series code (b) Dimension code (c) Material code (d.
Eris
8.0M22A - Transient Voltage Suppressors
8.0M Series Transient Voltage Suppressors family DO-218 Features ‧High current capability ‧Low Forward Voltage Drop ‧Low reverse current ‧Low therma.
Eris
8.0M22 - Transient Voltage Suppressors
8.0M Series Transient Voltage Suppressors family DO-218 Features ‧High current capability ‧Low Forward Voltage Drop ‧Low reverse current ‧Low therma.
Eris
8.0M22 - Transient Voltage Suppressors
8.0M Series Transient Voltage Suppressors family DO-218 Features ‧High current capability ‧Low Forward Voltage Drop ‧Low reverse current ‧Low therma.
YAGEO
SH050M2200B7F-1636 - Aluminum Electrolytic Capacitors
YAGEO Corporation Date: 04/15/2009 Aluminum Electrolytic Capacitors File : 2060 Engineering Bulletin for SH Type Page: 1/25 ____________________.
YAGEO
SH010M2200B5S-1019 - Aluminum Electrolytic Capacitors
YAGEO Corporation Date: 04/15/2009 Aluminum Electrolytic Capacitors File : 2060 Engineering Bulletin for SH Type Page: 1/25 ____________________.
YAGEO
SH010M2200B5S-1320 - Aluminum Electrolytic Capacitors
YAGEO Corporation Date: 04/15/2009 Aluminum Electrolytic Capacitors File : 2060 Engineering Bulletin for SH Type Page: 1/25 ____________________.
YAGEO
SH050M2200B7F-1836 - Aluminum Electrolytic Capacitors
YAGEO Corporation Date: 04/15/2009 Aluminum Electrolytic Capacitors File : 2060 Engineering Bulletin for SH Type Page: 1/25 ____________________.
YAGEO
SH010M2200A5S-1019 - Aluminum Electrolytic Capacitors
YAGEO Corporation Date: 04/15/2009 Aluminum Electrolytic Capacitors File : 2060 Engineering Bulletin for SH Type Page: 1/25 ____________________.
YAGEO
SH010M2200A5S-1320 - Aluminum Electrolytic Capacitors
YAGEO Corporation Date: 04/15/2009 Aluminum Electrolytic Capacitors File : 2060 Engineering Bulletin for SH Type Page: 1/25 ____________________.
Mitsubishi Electric Semiconductor
FU-68PDF-510M22B - 1.55 um DFB-LD MODULE
MITSUBISHI (OPTICAL DEVICES) FU-68PDF-V510MxxB 1.55 mm DFB-LD MODULE WITH POLARIZATION MAINTAINING FIBER PIGTAIL (WAVELENGTH SELECTED, BIAS CIRCUIT I.
Mitsubishi Electric Semiconductor
FU-68PDF-520M22B - 1.55 um DFB-LD MODULE
MITSUBISHI (OPTICAL DEVICES) FU-68PDF-V520MxxB 1.55 mm DFB-LD MODULE WITH POLARIZATION MAINTAINING FIBER PIGTAIL (WAVELENGTH SELECTED, BIAS CIRCUIT I.
Coilcraft
FCT1-50M22SL - Forward-Mode Transformers
Document 762 25 W Forward Mode Transformers • Designed for forward topology operating at 250 kHz • Three different outputs: 3.3 V, 5.0 V and 12 V •.
Coilcraft
FCT1-120M22SL - Forward-Mode Transformers
Document 762 25 W Forward Mode Transformers • Designed for forward topology operating at 250 kHz • Three different outputs: 3.3 V, 5.0 V and 12 V •.
Panasonic Semiconductor
AN80M22RSP - 5-pin/ low dropout voltage regulator
Voltage Regulators AN80MxxRSP Series 5-pin, low dropout voltage regulator with standby function (500 mA type) I Overview The AN80MxxRSP series is a 0.
Advanced Power Technology
APT20M22B2VFR - N-Channel MOSFET
APT20M22B2VFR 200V 100A 0.022Ω POWER MOS V ® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFE.
Advanced Power Technology
APT20M22B2VR - N-Channel MOSFET
APT20M22B2VR 200V 100A 0.022Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new techn.
Advanced Power Technology
APT20M22JVFR - N-Channel MOSFET
APT20M22JVFR 200V 97A 0.022Ω S G D S POWER MOS V ® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFET.
Advanced Power Technology
APT20M22JVR - N-Channel MOSFET
APT20M22JVR 200V 97A 0.022Ω S G D S POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new.
