8M-bit Datasheet | Specifications & PDF Download

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W25Q128JV-DTR 3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI & DTR Publication Release Date: November 4, 2016 -Revision B W25Q128JV-DTR Tab

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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Sept. 2024 SCB18X128XX0AF 128Mbit DDR OPI Xccela PSRAM EU RoHS Compliant Products Data Sheet Rev. H Data Sheet SCB18X128XX0AF 128Mbit DDR OPI Xccela

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8M x 8-Bit Dynamic RAM ( 4k & 8k Refresh) HYB 3164800AJ/AT(L) -40/-50/-60 HYB 3165800AJ/AT(L) -40/-50/-60 Advanced Information • • • • 8 388 608 wo

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8M x 8-Bit Dynamic RAM (4k & 8k Refresh) HYB 3164800J/T -50/-60 HYB 3165800J/T -50/-60 Preliminary Information • • • • • • • • • • • 8 388 608 w

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8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) HYB 3164805AJ/AT(L) -40/-50/-60 HYB 3165805AJ/AT(L) -40/-50/-60 Advanced Information • • • •

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8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) HYB 3164805AJ/AT(L) -40/-50/-60 HYB 3165805AJ/AT(L) -40/-50/-60 Advanced Information • • • •

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8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) HYB 3164805AJ/AT(L) -40/-50/-60 HYB 3165805AJ/AT(L) -40/-50/-60 Advanced Information • • • •

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8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-version) HYB 3164805BJ/BT(L) -40/-50/-60 HYB 3165805BJ/BT(L) -40/-50/-60 Premininary Information • • •

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K4S280832A CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to

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Ordering number : EN*5793 CMOS IC LC378000RP Internally Synchronized Silicon Gate 8M (1,048,576word × 8-bit, 524,288-word × 16-bit) Mask ROM Prelimi

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TC58FVM6(T/B)2A(FT/XB)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M × 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The

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www.DataSheet4U.com HY57V56820B(L)T 4 Banks x 8M x 8Bit Synchronous DRAM DESCRIPTION The HY57V56820B is a 268,435,456bit CMOS Synchronous DRAM, ideal

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www.DataSheet4U.com KM23C8100D(E)T 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(wor

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HANBit HDD16M64D8W DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM, Part No. HDD16M64D8W GENERAL DESCRIPTION The HANBiT H

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KH25U12839F KH25U12839F DATASHEET P/N: PM2038 REV. 1.2, FEB. 13, 2014 1 KH25U12839F Contents 1. FEATURES

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FEATURES: • High-density 1024K (128K x 8) CMOS static RAM module • Equivalent to JEDEC standard for future monolithic 128K x 8 static RAMs • Fast acce

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