900N15N Datasheet | Specifications & PDF Download

s OptiMOSTM3 Power-Transistor Package Marking • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS

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s OptiMOSTM3 Power-Transistor Package Marking • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS

(11 views)

() CRTE900N15N Trench N-MOSFET 150V, 63mΩ, 6.2A Features • Uses CRM(CQ) advanced Trench MOS technology • Extremely low on-resistance RDS(on) • Excel

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() CRTD900N15N Trench N-MOSFET 150V, 58mΩ, 23A Features • Uses CRM(CQ) advanced Trench MOS technology • Extremely low on-resistance RDS(on) • Excell

(4 views)