s OptiMOSTM3 Power-Transistor Package Marking • .
Infineon
900N15N - Power Transistor
s OptiMOSTM3 Power-Transistor Package Marking • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS.
Infineon
BSZ900N15NS3G - Power MOSFET
s OptiMOSTM3 Power-Transistor Package Marking • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS.
CR Micro
CRTD900N15N - Trench N-MOSFET
() CRTD900N15N Trench N-MOSFET 150V, 58mΩ, 23A Features • Uses CRM(CQ) advanced Trench MOS technology • Extremely low on-resistance RDS(on) • Excell.
CR Micro
CRTE900N15N - Trench N-MOSFET
() CRTE900N15N Trench N-MOSFET 150V, 63mΩ, 6.2A Features • Uses CRM(CQ) advanced Trench MOS technology • Extremely low on-resistance RDS(on) • Excel.
