A101/SMA101 5 TO 100 MHZ TO-8 CASCADABLE AMPLIFIER.
A101VW01-V0 - TFT LCD
Version Total pages Date 1 23 2007.12.07 Product Specification 10.1 〞 color TFT-LCD module MODEL NAME: A101VW 01 V0 www.DataSheet.co.kr ( ( ◆ ) .AA101-80 - GaAs IC 5 Bit Digital Attenuator 1 dB LSB Positive Control 0.5-2.5 GHz
GaAs IC 5 Bit Digital Attenuator 1 dB LSB Positive Control 0.5–2.5 GHz AA101-80 Features I Attenuation 1 dB Steps to 31 dB with High Accuracy I Single.A1015 - Silicon PNP Transistor
2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applica.A1015 - PNP Epitaxial Silicon Transistor
KSA1015 — PNP Epitaxial Silicon Transistor September 2015 KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-B.A101 - Cascadable Amplifier
A101 / SMA101 Cascadable Amplifier 5 to 100 MHz Rev. V2 Features • HIGH OUTPUT POWER: +23 dBm (TYP.) • HIGH THIRD ORDER IP: +36 dBm (TYP.) • HIGH S.QPA1013D - 10W GaN Power Amplifier
Applications Test Instrumentation Electronic Warfare (EW) Radar Communications QPA1013D 6 – 18GHz 10W GaN Power Amplifier Product Features .MC08FA101J-F - Multilayer RF Capacitors
Types MC and MCN Multilayer RF Capacitors www.DataSheet4U.com High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option Highlights • • •.TDA1013 - 4W audio power amplifier
PD F w C r e .n a t e n 8 c T ce. om ua ww ria l http://www.Datasheet4U.com PD F w C r e .n a t e n 8 c T ce. om ua ww ria l PD F w C r e .n a t .A1015 - PNP Epitaxial Silicon Transistor
PNP Epitaxial Silicon Transistor KSA1015 Features • Low−Frequency Amplifier • Collector−Base Voltage: VCBO = −50 V • Complement to KSC1815 • These De.2SA1018 - Silicon PNP Transistor
Transistor 2SA1018 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.2 s Features.A101 - 5 TO 100 MHZ TO-8 CASCADABLE AMPLIFIER
A101/SMA101 5 TO 100 MHZ TO-8 CASCADABLE AMPLIFIER · HIGH OUTPUT POWER: +22 dBm (TYP.) · HIGH THIRD ORDER IP: +36 dBm (TYP.) · HIGH SECOND ORDER IP: +.KSA1010 - High Speed High Voltage Switching
KSA1010 KSA1010 High Speed High Voltage Switching • Industrial Use • Complement to KSC2334 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Si.2SA1012 - PNP Epitaxial Silicon Transistor
PNP Epitaxial Silicon Transistor FEATURES Low Collector Saturation Voltage. VCE(sat)=-0.4V(Max.)at IC=-3A Complements the 2SC2562. Pb Lead-free.INA101 - High Accuracy INSTRUMENTATION AMPLIFIER
® INA101 High Accuracy INSTRUMENTATION AMPLIFIER FEATURES q q q q q q q LOW DRIFT: 0.25µV/°C max LOW OFFSET VOLTAGE: 25µV max LOW NONLINEARITY: 0.00.UMA1018M - Low-voltage dual frequency synthesizer for radio telephones
INTEGRATED CIRCUITS DATA SHEET UMA1018M Low-voltage dual frequency synthesizer for radio telephones Product specification Supersedes data of November.UMA1019AM - Low-voltage frequency synthesizer for radio telephones
INTEGRATED CIRCUITS DATA SHEET UMA1019AM Low-voltage frequency synthesizer for radio telephones Product specification Supersedes data of November 199.