| Part Number | Description | Manufacture |
|---|---|---|
|
|
PNP Epitaxial Planar Silicon Transistor • Adoption of MBIT processes • Low collector-to-emitter saturation voltage • High current capacitance • High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltag |
 Sanyo Semicon Device |
|
|
Bipolar Transistor • Adoption of MBIT processes • Low collector-to-emitter saturation voltage • High current capacitance • High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collect |
 ON Semiconductor |
|
|
ALUMINUM ELECTROLYTIC CAPACITORS 20°C Z – 40°C/ Z+20°C 25 to 100 4 12 Measurement frequency : 120Hz Endurance Shelf Life Marking The specifications listed at right shall be met when the capacitors are restored to 20°C after the rated voltage is applied for 1000 hours at 85°C. C |
 Nichicon |
|
|
VIDEO SWITCH Crosstalk (between any input, measured at 5MHz) RLOAD = 150Ω on Pins 2 and 6 RLOAD = 1kΩ on Pins 2 and 6 - 50 -55 dB dB 2124-03.TBL 3 0.7 5.5 12 4 1 6 18 1 1.3 6.5 VPP V dB MHz Ω VPP 1.3 6.5 V dB MHz Ω 10 µA V V 3 0.7 5.5 12 4 1 6 18 1 2.5 3.7 |
 ST Microelectronics |
|
|
1.5V Stereo Headphone Amplifier · Power amplifier stage · In case of output coupling type, the supply current decreases. (built−in center amplifier switch) · Built−in bass boost function · Built−in treble boost function · Built−in power amplifier muting function · Built−in input te |
 Toshiba Semiconductor |
|
|
Three quadrant triacs l sine wave; Tmb ≤ 99 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 12 -800 800 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for |
 NXP |
|
|
Three quadrant triacs RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 99 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0. |
NXP |
|
|
Three Quadrant Triacs High Commutation full sine wave; Tmb ≤ 99 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 12 -800 800 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t |
 Philips |
|
|
TRIACS Symbol IT(RMS) VDRM /VRRM Value 12 600/800/1200 TO-220A TO-220F Unit T2(2) T1(1) A G(3) V ABSOLUTE MAXIMUM RATINGS Parameter Symbol Storage junction temperature range Tstg Operating junction temperature range Tj Repetitive peak off-s |
 VSEEI |
|
|
Bipolar Transistor • Adoption of MBIT process • Low collector to emitter saturation voltage • Halogen free compliance • Large current capacity • High-speed switching Specifications ( ) : 2SA2125 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Bas |
ON Semiconductor |
| Total 120 results |
