A82 Datasheet | Specifications & PDF Download

www.DataSheet4U.com UTC TA8227P LINEAR INTEGRATED CIRCUIT LOW FREQUENCY POWER AMPLIFIER DESCRIPTION The UTC TA8227P is an audio power IC with built

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TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8227P Low Frequency Power Amplifier TA8227P is an audio power IC with built-in two cha

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BA8206 BA4 ： ：《》 ：BA8206 BA4 ，，BA8206 BA4 。 BA8206 BA4 PTC 、， 。 ： BA8206 BA4 1 BA8206 BA4 BA8206 BA4 DIP-18 。 1 BA8206 BA4 ， 1 BA8206 BA

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TA8248K TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8248K Low Frequency Power Amplifier TA8248K is an audio power IC with built-in

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TA8210AH / AL TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8210AH,TA8210AL 20W BTL × 2ch Audio Power Amplifier The thermal resistan

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KIA8205A-VB KIA8205A-VB Datasheet Dual N-Channel 25-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 4.5 V 25 0.0

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NXP Semiconductors Quadruple ESD transient voltage suppressor Product data sheet BZA800A-series FEATURES • ESD rating >8 kV, according to IEC1000-4-

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TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8229K Low Frequency Power Amplifier TA8229K is an audio power IC with built-in two cha

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TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8223K Low Frequency Power Amplifier TA8223K is an audio power IC with built-in two cha

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A8296 Single LNB Supply and Control Voltage Regulator FEATURES AND BENEFITS ▪ Integrated boost MOSFET, current sensing, and compensation ▪ Adjustabl

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OPA828, OPA2828 SBOS671D – SEPTEMBER 2018 – REVISED DECEMBER 2022 OPAx828 Low-Offset, Low-Drift, Low-Noise, 45-MHz, 36-V, JFET-Input Operational Ampli

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Power Rectifier, Ultra-Fast Recovery, 2 A, 150 V MURA215, SURA8215, MURA220, NRVUA220V, SURA8220 Ideally suited for high voltage, high frequency recti

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A8297 Dual LNB Supply and Control Voltage Regulator FEATURES AND BENEFITS ▪ Integrated boost MOSFET, current sensing, and compensation ▪ Adjustable L

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A8299 Dual LNB Supply and Control Voltage Regulator FEATURES AND BENEFITS ▪ Integrated boost MOSFET, current sensing, and compensation ▪ Stable with

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Power Rectifier, Ultra-Fast Recovery, 2 A, 150 V MURA215, SURA8215, MURA220, NRVUA220V, SURA8220 Ideally suited for high voltage, high frequency recti

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CHA8262-99F 27.5 - 31.5 GHz 12W HPA GaN Monolithic Microwave IC bare die Description The CHA8262-99F is three stages monolithic GaN High Power Ampli

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Si High Voltage Capacitors 1000 V MACOM KV CAPS™ Features • High Working Voltage: 1000 V • Wide Range of Capacitance: 3.6 - 1300 pF • Excellent Stabil

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PCA82C251 CAN transceiver for 24 V systems Rev. 04 — 25 August 2011 Product data sheet 1. General description The PCA82C251 is the interface between

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