AFA Datasheet | Specifications & PDF Download

5 Elektronische Bauelemente SF05S60F Voltage 600 V 5 Amp Low Loss Superfast Rectifier RoHS Compliant Product A suffix of “-C” specifies halogen free

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Elektronische Bauelemente SF08U60F Voltage 600V 8.0 Amp Low Loss Ultrafast Rectifier RoHS Compliant Product A suffix of “-C” specifies halogen free

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PRELIMINARY VERSION nly R820T O High Performance Low Power Advanced Digital TV Silicon Tuner Datasheet orSuite 808, Building 53, No.195, Sec.4, Chung

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Surge Current Capability  High Reliability  Ideally Suited for

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SEMICONDUCTOR N-HFA15TB60 RRooHHSS Nell High Power Products FRED Ultrafast Soft Recovery Diode, 15 A FEATURES Ultrafast recovery Ultrasoft recover

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SFA70UP20DN 70A, 200V Ultrafast Dual Diode Features • Ultrafast Soft Recovery: trr=40ns • Typical Forward Voltage: VF=0.96V@ IF=35A • Reverse Voltage:

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Ultrafast Rectifier INCHANGE Semiconductor N-D92-02 FEATURES ·Ultrafast recovery time ·Very low lRRM ·Very low Qrr ·Specified at operating condition

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ULTRAFAST RECOVERY POWER RECTIFIER SF5A400HD Ultrafast Recovery Rectifier Features  High voltage and high reliability  Ult rafast reverse recovery

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Bulletin PD-21079 08/05 60EPU02PbF 60APU02PbF Ultrafast Soft Recovery Diode Features • Ultrafast Recovery • 175°C Operating Junction Temperature • Le

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Bulletin PD-21078 rev. A 10/06 8ETU04PbF Ultrafast Rectifier Features • • • • • Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current

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Datasheet RL78/G13 RENESAS MCU R01DS0131EJ0350 Rev.3.50 Jun 30, 2020 True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC an

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SFN10A600 Ultrafast Recovery Rectifier Ultrafast Recovery Power Rectifier General Description The SFN10A600 is ideally as boost diode in discontinuo

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Ultrafast Rectifier INCHANGE Semiconductor MUR3060PT FEATURES ·Guarding for over voltage protection ·Dual rectifier construction,positive center tap

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SGH40N60UFD SGH40N60UFD Ultra-Fast IGBT IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Surge Current Capability  High Reliability  Ideally Suited for

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Micron Confidential and Proprietary 2Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F2G08ABAFAH4, MT29F2G08ABAFAWP, MT29F2G08ABBFAH4, M

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( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com

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www.DataSheet.co.kr UG30APT thru UG30DPT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated ch

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FUR420 FUR460 4 Amp. Glass Passivated Avalanche Ultrafast Recovery Rectifier Dimensions in mm. DO-201AD (Plastic) Voltage 200 to 600 V Current 4

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MUR3005 thru MUR3060 ® MUR3005 thru MUR3060 Pb Free Plating Product Pb 30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes Features

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