AM5 Datasheet | Specifications & PDF Download

DATA SHEET www.onsemi.com Intelligent Power Module (IPM) Inverter, 1200 V, 40 A NFAM5312SCBUT General Description The NFAM5312SCBUT is a fully−inte

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Analog Power N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica

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Product Folder Order Now Technical Documents Tools & Software Support & Community AM5706, AM5708 SPRS961F – AUGUST 2016 – REVISED NOVEMBER 2019 A

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Analog Power N-Channel 80-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and t

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Switched Low Noise Amplifier, 800-1000 MHz AM55-0016 AM55-0016 Switched Low Noise Amplifier 800 - 1000 MHz Features • MSOP-8 R 010 ID PIN • • • •

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Features • Programmable System Clock with Prescaler and Five Different Clock Sources – Up to 8-MHz Crystal Oscillator (System Clock) – 32-kHz Crystal

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Analog Power AM5400N N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed • Sma

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Product Folder Order Now Technical Documents Tools & Software Support & Community AM5718, AM5716 SPRS957I – MARCH 2016 – REVISED NOVEMBER 2019 AM

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Product Folder Order Now Technical Documents Tools & Software Support & Community AM5706, AM5708 SPRS961F – AUGUST 2016 – REVISED NOVEMBER 2019 A

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. MSCSM120AM50CT1AG Datasheet Phase Leg SiC MOSFET Power Module January 2020 Contents Contents Revision History

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PRELIMINARY Am5X86™ Microprocessor Family Advanced Micro Devices DISTINCTIVE CHARACTERISTICS s High-Performance Design — Industry-standard write-bac

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AM55-0023 Variable Voltage Gain Control Amplifier 0.8 - 2.0 GHz Features • • • • • Highly Integrated Variable Voltage Gain Control Amplifier Operates

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Preliminary Release 1.2 W High Efficiency Power Amplifier 800 - 960 MHz Features • • • • • SOIC-8 Thermally Efficient Plastic Package +30.8 dBm Typic

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45 Features • • • • • • • • • EMI filtering-MIL-STD-461E Transient protection-MIL-STD-704E 1 Environments-MIL-STD-810, MIL-STD-202 Environmental stres

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45 Features • • • • • • • • • EMI filtering-MIL-STD-461E Transient protection-MIL-STD-704E 1 Environments-MIL-STD-810, MIL-STD-202 Environmental stres

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AM50-0002 Low Noise Amplifier 1.575 GHz Features • Low Noise Figure: 1.15 dB • High Gain: 27 dB • Low Power Consumption: 5V, 20 mA • High Dynamic Ran

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Analog Power P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and t

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High Dynamic Range Low Noise Amplifier 1400 - 2000 MHz Features • Low Noise Figure: 1.4 dB • High Input IP3: +18 dBm at 8 V, 45 mA bias +8 dBm at 3 V

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Power Amplifier with T/R Switch for 802.11b Preliminary Release V 1.3 AM52-0023 Features • • • • • • WLAN and Bluetooth Applications Meets 802.11b S

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0.5 W, 2.4 GHz Power Amplifier V 1.4 AM52-0024 Features • • • • • Ideal for 802.11b ISM Applications Single Positive Supply Output Power 27.5 dBm 57

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