AOB11S60 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor AOB11S60 FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-R

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AOT11S60/AOB11S60/AOTF11S60 600V 11A α MOS TM Power Transistor General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the

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AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 600V 11A a MOS TM Power Transistor General Description Product Summary The AOT11S60L & AOB11S60L & AOTF11S

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