AOB11S65 Datasheet | Specifications & PDF Download

AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the

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isc N-Channel MOSFET Transistor AOB11S65 FEATURES ·Drain Current –ID=11A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Res

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AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description The AOT11S65 & AOB11S65 & AOTF11S65 have been TM fabricated using

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AOT11S65L/AOB11S65L/AOTF11S65L/AOTF11S65 650V 11A a MOS TM Power Transistor General Description Product Summary The AOT11S65L & AOB11S65L & AOTF11S

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