AOD2610 Datasheet | Specifications & PDF Download

AOD2610 60V N-Channel MOSFET General Description The AOD2610 uses trench MOSFET technology that is uniquely optimized to provide the most efficient h

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isc N-Channel MOSFET Transistor AOD2610E FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Res

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AOD2610E/AOI2610E/AOY2610E 60V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Low E

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Isc N-Channel MOSFET Transistor AOD2610 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100%

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AOD2610 AOD2610 Datasheet N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.010 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 58

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